Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDs
The electrophysical and radiation characteristics of the original and irradiated electrons with E = 2 MeV GaAsP light emitting diodes were studied. The results of measurements of current-current characteristics in the range of 77 - 300 K are given. In the range of 180 - 77 K, a region of negative di...
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| Format: | Article |
| Language: | English |
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Institute for Nuclear Research, National Academy of Sciences of Ukraine
2024-06-01
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| Series: | Ядерна фізика та енергетика |
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| Online Access: | https://jnpae.kinr.kyiv.ua/25.2/Articles_PDF/jnpae-2024-25-0125-Mosiuk.pdf |
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| author | T. I. Mosiuk R. M. Vernydub P. G. Lytovchenko M. B. Pinkovska D. P. Stratilat V. P. Tartachnyk |
| author_facet | T. I. Mosiuk R. M. Vernydub P. G. Lytovchenko M. B. Pinkovska D. P. Stratilat V. P. Tartachnyk |
| author_sort | T. I. Mosiuk |
| collection | DOAJ |
| description | The electrophysical and radiation characteristics of the original and irradiated electrons with E = 2 MeV GaAsP light emitting diodes were studied. The results of measurements of current-current characteristics in the range of 77 - 300 K are given. In the range of 180 - 77 K, a region of negative differential resistance was detected. The main characteristic parameters of light emitting diodes radiation are determined. The consequences of the effect of radiation defects on the emissivity and quantum yield of the studied structures are discussed. |
| format | Article |
| id | doaj-art-5fed525d5b0c408ea35198d8331ec24c |
| institution | OA Journals |
| issn | 1818-331X 2074-0565 |
| language | English |
| publishDate | 2024-06-01 |
| publisher | Institute for Nuclear Research, National Academy of Sciences of Ukraine |
| record_format | Article |
| series | Ядерна фізика та енергетика |
| spelling | doaj-art-5fed525d5b0c408ea35198d8331ec24c2025-08-20T02:23:40ZengInstitute for Nuclear Research, National Academy of Sciences of UkraineЯдерна фізика та енергетика1818-331X2074-05652024-06-01252125133https://doi.org/10.15407/jnpae2024.02.125Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDsT. I. Mosiuk0R. M. Vernydub1P. G. Lytovchenko2M. B. Pinkovska3D. P. Stratilat4V. P. Tartachnyk5Drahomanov Ukrainian State University, Kyiv, UkraineDrahomanov Ukrainian State University, Kyiv, UkraineInstitute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineInstitute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineInstitute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineInstitute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineThe electrophysical and radiation characteristics of the original and irradiated electrons with E = 2 MeV GaAsP light emitting diodes were studied. The results of measurements of current-current characteristics in the range of 77 - 300 K are given. In the range of 180 - 77 K, a region of negative differential resistance was detected. The main characteristic parameters of light emitting diodes radiation are determined. The consequences of the effect of radiation defects on the emissivity and quantum yield of the studied structures are discussed.https://jnpae.kinr.kyiv.ua/25.2/Articles_PDF/jnpae-2024-25-0125-Mosiuk.pdfgaasplight emitting diodesnegative differential resistancecurrent-current characteristics. |
| spellingShingle | T. I. Mosiuk R. M. Vernydub P. G. Lytovchenko M. B. Pinkovska D. P. Stratilat V. P. Tartachnyk Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDs Ядерна фізика та енергетика gaasp light emitting diodes negative differential resistance current-current characteristics. |
| title | Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDs |
| title_full | Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDs |
| title_fullStr | Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDs |
| title_full_unstemmed | Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDs |
| title_short | Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDs |
| title_sort | negative differential resistance and spectral characteristics of original and electron irradiated with e 2 mev gaas1 xpx leds |
| topic | gaasp light emitting diodes negative differential resistance current-current characteristics. |
| url | https://jnpae.kinr.kyiv.ua/25.2/Articles_PDF/jnpae-2024-25-0125-Mosiuk.pdf |
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