Impact of high-temperature processing steps on the long-term stability of charge carrier lifetime in n-type FZ-silicon

In this work, the long-term behavior of excess charge carrier lifetime in n-type FZ-Si wafers without presence of highly doped layers is investigated during illumination at elevated temperatures. Thereby, the influence of high-temperature processing steps such as short high temperature thermal treat...

Full description

Saved in:
Bibliographic Details
Main Authors: Mehler Melanie, Weinert Nicolas, Aßmann Nicole, Herguth Axel, Hahn Giso, Geml Fabian
Format: Article
Language:English
Published: EDP Sciences 2025-01-01
Series:EPJ Photovoltaics
Subjects:
Online Access:https://www.epj-pv.org/articles/epjpv/full_html/2025/01/pv20240053/pv20240053.html
Tags: Add Tag
No Tags, Be the first to tag this record!