Impact of high-temperature processing steps on the long-term stability of charge carrier lifetime in n-type FZ-silicon
In this work, the long-term behavior of excess charge carrier lifetime in n-type FZ-Si wafers without presence of highly doped layers is investigated during illumination at elevated temperatures. Thereby, the influence of high-temperature processing steps such as short high temperature thermal treat...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2025-01-01
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| Series: | EPJ Photovoltaics |
| Subjects: | |
| Online Access: | https://www.epj-pv.org/articles/epjpv/full_html/2025/01/pv20240053/pv20240053.html |
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