Impact of high-temperature processing steps on the long-term stability of charge carrier lifetime in n-type FZ-silicon
In this work, the long-term behavior of excess charge carrier lifetime in n-type FZ-Si wafers without presence of highly doped layers is investigated during illumination at elevated temperatures. Thereby, the influence of high-temperature processing steps such as short high temperature thermal treat...
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| Format: | Article |
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EDP Sciences
2025-01-01
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| Series: | EPJ Photovoltaics |
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| Online Access: | https://www.epj-pv.org/articles/epjpv/full_html/2025/01/pv20240053/pv20240053.html |
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| author | Mehler Melanie Weinert Nicolas Aßmann Nicole Herguth Axel Hahn Giso Geml Fabian |
| author_facet | Mehler Melanie Weinert Nicolas Aßmann Nicole Herguth Axel Hahn Giso Geml Fabian |
| author_sort | Mehler Melanie |
| collection | DOAJ |
| description | In this work, the long-term behavior of excess charge carrier lifetime in n-type FZ-Si wafers without presence of highly doped layers is investigated during illumination at elevated temperatures. Thereby, the influence of high-temperature processing steps such as short high temperature thermal treatment, often referred to as tabula rasa (TR), and phosphorus diffusion gettering is considered. Degradation of effective lifetime is observed as well as a very strong regeneration effect that significantly exceeds the initial effective lifetime value. The phosphorus gettering step appears to have no significant effect on the degradation and regeneration behavior. Samples subjected to a TR treatment show only bulk-related regeneration. Investigations in darkness showed that the bulk-related regeneration is carrier-induced and not necessarily light-induced. FT-IR measurements at 5 K showed that the samples with a TR step have a higher Oi concentration in the Si bulk and that the hydrogen-passivated vacancies (VH4) are dissolved. The regeneration behavior of the samples with a TR step could be correlated with a reduced vacancy concentration. Such a thermal processing step appears to offer a strong mitigation strategy. |
| format | Article |
| id | doaj-art-5fac03adef414adba7ae521f20a9f0ff |
| institution | DOAJ |
| issn | 2105-0716 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | EPJ Photovoltaics |
| spelling | doaj-art-5fac03adef414adba7ae521f20a9f0ff2025-08-20T03:16:28ZengEDP SciencesEPJ Photovoltaics2105-07162025-01-01161510.1051/epjpv/2025006pv20240053Impact of high-temperature processing steps on the long-term stability of charge carrier lifetime in n-type FZ-siliconMehler Melanie0https://orcid.org/0000-0002-0557-6290Weinert Nicolas1Aßmann Nicole2Herguth Axel3https://orcid.org/0000-0003-1079-1179Hahn Giso4https://orcid.org/0000-0001-8292-1281Geml Fabian5https://orcid.org/0000-0002-2803-5390University of Konstanz, Department of PhysicsUniversity of Konstanz, Department of PhysicsCentre for Materials Science and Nanotechnology, University of OsloUniversity of Konstanz, Department of PhysicsUniversity of Konstanz, Department of PhysicsUniversity of Konstanz, Department of PhysicsIn this work, the long-term behavior of excess charge carrier lifetime in n-type FZ-Si wafers without presence of highly doped layers is investigated during illumination at elevated temperatures. Thereby, the influence of high-temperature processing steps such as short high temperature thermal treatment, often referred to as tabula rasa (TR), and phosphorus diffusion gettering is considered. Degradation of effective lifetime is observed as well as a very strong regeneration effect that significantly exceeds the initial effective lifetime value. The phosphorus gettering step appears to have no significant effect on the degradation and regeneration behavior. Samples subjected to a TR treatment show only bulk-related regeneration. Investigations in darkness showed that the bulk-related regeneration is carrier-induced and not necessarily light-induced. FT-IR measurements at 5 K showed that the samples with a TR step have a higher Oi concentration in the Si bulk and that the hydrogen-passivated vacancies (VH4) are dissolved. The regeneration behavior of the samples with a TR step could be correlated with a reduced vacancy concentration. Such a thermal processing step appears to offer a strong mitigation strategy.https://www.epj-pv.org/articles/epjpv/full_html/2025/01/pv20240053/pv20240053.htmllong-term stabilityn-typefz-sithermal annealoxygenpoint defects |
| spellingShingle | Mehler Melanie Weinert Nicolas Aßmann Nicole Herguth Axel Hahn Giso Geml Fabian Impact of high-temperature processing steps on the long-term stability of charge carrier lifetime in n-type FZ-silicon EPJ Photovoltaics long-term stability n-type fz-si thermal anneal oxygen point defects |
| title | Impact of high-temperature processing steps on the long-term stability of charge carrier lifetime in n-type FZ-silicon |
| title_full | Impact of high-temperature processing steps on the long-term stability of charge carrier lifetime in n-type FZ-silicon |
| title_fullStr | Impact of high-temperature processing steps on the long-term stability of charge carrier lifetime in n-type FZ-silicon |
| title_full_unstemmed | Impact of high-temperature processing steps on the long-term stability of charge carrier lifetime in n-type FZ-silicon |
| title_short | Impact of high-temperature processing steps on the long-term stability of charge carrier lifetime in n-type FZ-silicon |
| title_sort | impact of high temperature processing steps on the long term stability of charge carrier lifetime in n type fz silicon |
| topic | long-term stability n-type fz-si thermal anneal oxygen point defects |
| url | https://www.epj-pv.org/articles/epjpv/full_html/2025/01/pv20240053/pv20240053.html |
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