High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels
Highlights A high-density array of orderly silicon nanowires (SiNWs) was grown in precise locations, with diameter of D NW = 22.4 ± 2.4 nm and interwire spacing of 90 nm. A special suspension-contact protocol has been developed to reliably suspend the in-plane solid-liquid-solid SiNWs to serve as ul...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2025-02-01
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| Series: | Nano-Micro Letters |
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| Online Access: | https://doi.org/10.1007/s40820-025-01674-8 |
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| author | Wei Liao Wentao Qian Junyang An Lei Liang Zhiyan Hu Junzhuan Wang Linwei Yu |
| author_facet | Wei Liao Wentao Qian Junyang An Lei Liang Zhiyan Hu Junzhuan Wang Linwei Yu |
| author_sort | Wei Liao |
| collection | DOAJ |
| description | Highlights A high-density array of orderly silicon nanowires (SiNWs) was grown in precise locations, with diameter of D NW = 22.4 ± 2.4 nm and interwire spacing of 90 nm. A special suspension-contact protocol has been developed to reliably suspend the in-plane solid-liquid-solid SiNWs to serve as ultrathin quasi-1D channels for gate-all-around field-effect transistors (GAA-FETs). By optimizing the source/drain metal contacts, high-performance catalytical GAA-FETs have been successfully demonstrated, achieving a high on/off current ratio of 107 and a steep subthreshold swing of 66 mV dec-1. |
| format | Article |
| id | doaj-art-5fa30702e06b495ba5d30af0cd122e4e |
| institution | Kabale University |
| issn | 2311-6706 2150-5551 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nano-Micro Letters |
| spelling | doaj-art-5fa30702e06b495ba5d30af0cd122e4e2025-08-20T04:02:56ZengSpringerOpenNano-Micro Letters2311-67062150-55512025-02-0117111110.1007/s40820-025-01674-8High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire ChannelsWei Liao0Wentao Qian1Junyang An2Lei Liang3Zhiyan Hu4Junzhuan Wang5Linwei Yu6School of Electronic Science & Engineering, Nanjing UniversitySchool of Electronic Science & Engineering, Nanjing UniversitySchool of Electronic Science & Engineering, Nanjing UniversitySchool of Electronic Science & Engineering, Nanjing UniversitySchool of Electronic Science & Engineering, Nanjing UniversitySchool of Electronic Science & Engineering, Nanjing UniversitySchool of Electronic Science & Engineering, Nanjing UniversityHighlights A high-density array of orderly silicon nanowires (SiNWs) was grown in precise locations, with diameter of D NW = 22.4 ± 2.4 nm and interwire spacing of 90 nm. A special suspension-contact protocol has been developed to reliably suspend the in-plane solid-liquid-solid SiNWs to serve as ultrathin quasi-1D channels for gate-all-around field-effect transistors (GAA-FETs). By optimizing the source/drain metal contacts, high-performance catalytical GAA-FETs have been successfully demonstrated, achieving a high on/off current ratio of 107 and a steep subthreshold swing of 66 mV dec-1.https://doi.org/10.1007/s40820-025-01674-8In-plane solid-liquid-solidUltrathin silicon nanowiresGate-all-around field-effect transistors (GAA-FETs) |
| spellingShingle | Wei Liao Wentao Qian Junyang An Lei Liang Zhiyan Hu Junzhuan Wang Linwei Yu High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels Nano-Micro Letters In-plane solid-liquid-solid Ultrathin silicon nanowires Gate-all-around field-effect transistors (GAA-FETs) |
| title | High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels |
| title_full | High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels |
| title_fullStr | High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels |
| title_full_unstemmed | High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels |
| title_short | High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels |
| title_sort | high performance gate all around field effect transistors based on orderly arrays of catalytic si nanowire channels |
| topic | In-plane solid-liquid-solid Ultrathin silicon nanowires Gate-all-around field-effect transistors (GAA-FETs) |
| url | https://doi.org/10.1007/s40820-025-01674-8 |
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