Investigation of CNTFET Performance with Gate Control Coefficient Effect

For the first time, a deep study of gate control coefficient (αG) effect on CNTFET performance has done in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed with 3D output in MATLAB and that used it to examine device performance. It is found that,...

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Main Authors: S.A. Khan, M. Hasan, S.M. Mominuzzaman
Format: Article
Language:English
Published: Sumy State University 2014-06-01
Series:Журнал нано- та електронної фізики
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Online Access:http://jnep.sumdu.edu.ua/download/numbers/2014/2/articles/jnep_2014_V6_02008.pdf
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author S.A. Khan
M. Hasan
S.M. Mominuzzaman
author_facet S.A. Khan
M. Hasan
S.M. Mominuzzaman
author_sort S.A. Khan
collection DOAJ
description For the first time, a deep study of gate control coefficient (αG) effect on CNTFET performance has done in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed with 3D output in MATLAB and that used it to examine device performance. It is found that, drain current and transconductance increases with high gate control coefficient. On the other hand, total capacitance decreases with high αG value resulting improved charging energy. Likewise, drain induced barrier lowering (DIBL) decreases with αG that provides less deviation from ideal device performance. Finally, subthreshold swing comes very close to the theoretical limit at high αG which is desired for low threshold voltage and low-power operation for FETs scaled down to small sizes.
format Article
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institution OA Journals
issn 2077-6772
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publisher Sumy State University
record_format Article
series Журнал нано- та електронної фізики
spelling doaj-art-5f5c960f136f45bd9215d8f017e9f8262025-08-20T01:57:00ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722014-06-016202008-102008-4Investigation of CNTFET Performance with Gate Control Coefficient EffectS.A. Khan0M. Hasan1S.M. Mominuzzaman2Robotics Research Lab, School of Engineering and Computer Science, BRAC University, BangladeshDepartment of Electrical & Electronic Engineering, BRAC University, BangladeshDepartment of Electrical & Electronic Engineering, Bangladesh University of Engineering & Technology, BangladeshFor the first time, a deep study of gate control coefficient (αG) effect on CNTFET performance has done in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed with 3D output in MATLAB and that used it to examine device performance. It is found that, drain current and transconductance increases with high gate control coefficient. On the other hand, total capacitance decreases with high αG value resulting improved charging energy. Likewise, drain induced barrier lowering (DIBL) decreases with αG that provides less deviation from ideal device performance. Finally, subthreshold swing comes very close to the theoretical limit at high αG which is desired for low threshold voltage and low-power operation for FETs scaled down to small sizes.http://jnep.sumdu.edu.ua/download/numbers/2014/2/articles/jnep_2014_V6_02008.pdfGate Control CoefficientCNTFETDrain сurrentTransconductanc
spellingShingle S.A. Khan
M. Hasan
S.M. Mominuzzaman
Investigation of CNTFET Performance with Gate Control Coefficient Effect
Журнал нано- та електронної фізики
Gate Control Coefficient
CNTFET
Drain сurrent
Transconductanc
title Investigation of CNTFET Performance with Gate Control Coefficient Effect
title_full Investigation of CNTFET Performance with Gate Control Coefficient Effect
title_fullStr Investigation of CNTFET Performance with Gate Control Coefficient Effect
title_full_unstemmed Investigation of CNTFET Performance with Gate Control Coefficient Effect
title_short Investigation of CNTFET Performance with Gate Control Coefficient Effect
title_sort investigation of cntfet performance with gate control coefficient effect
topic Gate Control Coefficient
CNTFET
Drain сurrent
Transconductanc
url http://jnep.sumdu.edu.ua/download/numbers/2014/2/articles/jnep_2014_V6_02008.pdf
work_keys_str_mv AT sakhan investigationofcntfetperformancewithgatecontrolcoefficienteffect
AT mhasan investigationofcntfetperformancewithgatecontrolcoefficienteffect
AT smmominuzzaman investigationofcntfetperformancewithgatecontrolcoefficienteffect