Influence of the germanium and oxygen impurities on the radiation stability of the silicon
Infrared absorption spectra of the Silicon single-crystals with the Germanium impurity (Ge ≤ 0,7 at. %) after the irradiation by the reactor neutron fluences of 5 · 10 16 n/cm 2 and 5 · 10 19 n/cm 2 are measured. It was shown that the Germanium impurity increases the radiation strength of Cz-Si to t...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Institute for Nuclear Research, National Academy of Sciences of Ukraine
2008-08-01
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| Series: | Ядерна фізика та енергетика |
| Online Access: | http://jnpae.kinr.kiev.ua/24(2)/Articles_PDF/jnpae-2008-2(24)-0068-Groza.pdf |
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| _version_ | 1850223226870824960 |
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| author | A. A. Groza V. I. Varnina P. G. Litovchenko L. S. Marchenko M. I. Starchik L. I. Barabash S. V. Berdnichenko |
| author_facet | A. A. Groza V. I. Varnina P. G. Litovchenko L. S. Marchenko M. I. Starchik L. I. Barabash S. V. Berdnichenko |
| author_sort | A. A. Groza |
| collection | DOAJ |
| description | Infrared absorption spectra of the Silicon single-crystals with the Germanium impurity (Ge ≤ 0,7 at. %) after the irradiation by the reactor neutron fluences of 5 · 10 16 n/cm 2 and 5 · 10 19 n/cm 2 are measured. It was shown that the Germanium impurity increases the radiation strength of Cz-Si to the formation of such radiation defects as divacancies. Silicon structure with the content of the Germanium from 0 to 14 at. % was studied by the selective etching method. It was shown that the uniformity of the defect (dislocation) distribution is maintained at small Germanium content
≤1 at. % and its homogeneous distribution within the ingot. On the base of such material the spectrometrical detectors of nuclear radiation have been produced. High Germanium concentration adulterate the homogeneity of its distribution in Silicon. |
| format | Article |
| id | doaj-art-5e266f212ebc4bd8853fb92c59bf66d1 |
| institution | OA Journals |
| issn | 1818-331X 2074-0565 |
| language | English |
| publishDate | 2008-08-01 |
| publisher | Institute for Nuclear Research, National Academy of Sciences of Ukraine |
| record_format | Article |
| series | Ядерна фізика та енергетика |
| spelling | doaj-art-5e266f212ebc4bd8853fb92c59bf66d12025-08-20T02:06:03ZengInstitute for Nuclear Research, National Academy of Sciences of UkraineЯдерна фізика та енергетика1818-331X2074-05652008-08-0192(24)6872Influence of the germanium and oxygen impurities on the radiation stability of the siliconA. A. Groza0V. I. Varnina1P. G. Litovchenko2L. S. Marchenko3M. I. Starchik4L. I. Barabash5S. V. Berdnichenko6216. Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine216. Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine216. Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine216. Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine216. Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine216. Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine216. Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineInfrared absorption spectra of the Silicon single-crystals with the Germanium impurity (Ge ≤ 0,7 at. %) after the irradiation by the reactor neutron fluences of 5 · 10 16 n/cm 2 and 5 · 10 19 n/cm 2 are measured. It was shown that the Germanium impurity increases the radiation strength of Cz-Si to the formation of such radiation defects as divacancies. Silicon structure with the content of the Germanium from 0 to 14 at. % was studied by the selective etching method. It was shown that the uniformity of the defect (dislocation) distribution is maintained at small Germanium content ≤1 at. % and its homogeneous distribution within the ingot. On the base of such material the spectrometrical detectors of nuclear radiation have been produced. High Germanium concentration adulterate the homogeneity of its distribution in Silicon.http://jnpae.kinr.kiev.ua/24(2)/Articles_PDF/jnpae-2008-2(24)-0068-Groza.pdf |
| spellingShingle | A. A. Groza V. I. Varnina P. G. Litovchenko L. S. Marchenko M. I. Starchik L. I. Barabash S. V. Berdnichenko Influence of the germanium and oxygen impurities on the radiation stability of the silicon Ядерна фізика та енергетика |
| title | Influence of the germanium and oxygen impurities on the radiation stability of the silicon |
| title_full | Influence of the germanium and oxygen impurities on the radiation stability of the silicon |
| title_fullStr | Influence of the germanium and oxygen impurities on the radiation stability of the silicon |
| title_full_unstemmed | Influence of the germanium and oxygen impurities on the radiation stability of the silicon |
| title_short | Influence of the germanium and oxygen impurities on the radiation stability of the silicon |
| title_sort | influence of the germanium and oxygen impurities on the radiation stability of the silicon |
| url | http://jnpae.kinr.kiev.ua/24(2)/Articles_PDF/jnpae-2008-2(24)-0068-Groza.pdf |
| work_keys_str_mv | AT aagroza influenceofthegermaniumandoxygenimpuritiesontheradiationstabilityofthesilicon AT vivarnina influenceofthegermaniumandoxygenimpuritiesontheradiationstabilityofthesilicon AT pglitovchenko influenceofthegermaniumandoxygenimpuritiesontheradiationstabilityofthesilicon AT lsmarchenko influenceofthegermaniumandoxygenimpuritiesontheradiationstabilityofthesilicon AT mistarchik influenceofthegermaniumandoxygenimpuritiesontheradiationstabilityofthesilicon AT libarabash influenceofthegermaniumandoxygenimpuritiesontheradiationstabilityofthesilicon AT svberdnichenko influenceofthegermaniumandoxygenimpuritiesontheradiationstabilityofthesilicon |