Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons
Serial green and red GaP light emitting diodes were studied. Structures were irradiated at room temperatures with 2 MeV electrons in pulse mode and electrical characteristics were measured at 77 – 300 K. It was observed the new stage of negative differential resistance at low temperature (90 K) and...
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| Format: | Article |
| Language: | English |
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Institute for Nuclear Research, National Academy of Sciences of Ukraine
2014-12-01
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| Series: | Ядерна фізика та енергетика |
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| Online Access: | http://jnpae.kinr.kiev.ua/15.4/Articles_PDF/jnpae-2014-15-0349-Konoreva.pdf |
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| author | O. V. Konoreva E. V. Maliy I. V. Petrenko M. B. Pinkovska V. P. Tartachnyk V. V. Shlapatska |
| author_facet | O. V. Konoreva E. V. Maliy I. V. Petrenko M. B. Pinkovska V. P. Tartachnyk V. V. Shlapatska |
| author_sort | O. V. Konoreva |
| collection | DOAJ |
| description | Serial green and red GaP light emitting diodes were studied. Structures were irradiated at room temperatures with 2 MeV electrons in pulse mode and electrical characteristics were measured at 77 – 300 K. It was observed the new stage of negative differential resistance at low temperature (90 K) and the current (< 103 mA) interval, additionally to known S-type instability. Luminescence characteristics at different temperatures and injection levels were given for all types’ diodes. Dose dependencies of luminescence intensity on electron dose and its restoring after irradiation were also presented. |
| format | Article |
| id | doaj-art-5de2af78a2d04fbcaab7a5af9d7b0777 |
| institution | OA Journals |
| issn | 1818-331X 2074-0565 |
| language | English |
| publishDate | 2014-12-01 |
| publisher | Institute for Nuclear Research, National Academy of Sciences of Ukraine |
| record_format | Article |
| series | Ядерна фізика та енергетика |
| spelling | doaj-art-5de2af78a2d04fbcaab7a5af9d7b07772025-08-20T01:57:16ZengInstitute for Nuclear Research, National Academy of Sciences of UkraineЯдерна фізика та енергетика1818-331X2074-05652014-12-01154349352Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electronsO. V. Konoreva0E. V. Maliy1 I. V. Petrenko2M. B. Pinkovska3V. P. Tartachnyk4V. V. Shlapatska5 Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineInstitute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineInstitute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineInstitute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, ukraineInstitute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineSE "Radma", L. V. Pisarzhevskii Institute of Physical Chemistry, National Academy of Sciences of Ukraine, Kyiv, UkraineSerial green and red GaP light emitting diodes were studied. Structures were irradiated at room temperatures with 2 MeV electrons in pulse mode and electrical characteristics were measured at 77 – 300 K. It was observed the new stage of negative differential resistance at low temperature (90 K) and the current (< 103 mA) interval, additionally to known S-type instability. Luminescence characteristics at different temperatures and injection levels were given for all types’ diodes. Dose dependencies of luminescence intensity on electron dose and its restoring after irradiation were also presented.http://jnpae.kinr.kiev.ua/15.4/Articles_PDF/jnpae-2014-15-0349-Konoreva.pdfgallium phosphidelight emitting diodeirradiationvoltage-current characteristivoltage-current characteristic |
| spellingShingle | O. V. Konoreva E. V. Maliy I. V. Petrenko M. B. Pinkovska V. P. Tartachnyk V. V. Shlapatska Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons Ядерна фізика та енергетика gallium phosphide light emitting diode irradiation voltage-current characteristi voltage-current characteristic |
| title | Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons |
| title_full | Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons |
| title_fullStr | Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons |
| title_full_unstemmed | Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons |
| title_short | Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons |
| title_sort | electrical and optical characteristics of gap diodes irradiated with 2 mev electrons |
| topic | gallium phosphide light emitting diode irradiation voltage-current characteristi voltage-current characteristic |
| url | http://jnpae.kinr.kiev.ua/15.4/Articles_PDF/jnpae-2014-15-0349-Konoreva.pdf |
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