Investigation of Light-Extraction Efficiency of Flip-Chip AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes Adopting AlGaN Metasurface
Herein, we investigate the influence of an AlGaN metasurface on AlGaN-based deep-ultraviolet light-emitting diodes' light-extraction efficiency by utilizing the 3D finite-difference time-domain method. As the first step in this study, we optimize an AlGaN metasurface to maximize the transmittan...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9337934/ |
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| Summary: | Herein, we investigate the influence of an AlGaN metasurface on AlGaN-based deep-ultraviolet light-emitting diodes' light-extraction efficiency by utilizing the 3D finite-difference time-domain method. As the first step in this study, we optimize an AlGaN metasurface to maximize the transmittance from LED to air. Then, six different flip-chip structures' light-extraction efficiencies are compared with each other to judge the usefulness of the metasurface's adoption on AlGaN-based LED. Considered structures are classified into two categories, with and without inclined sidewall, respectively. Each classified structure is subdivided again by three factors: flat interface, roughed cones, and metasurface on n-AlGaN. Extracted results show that the combination of inclined sidewall and the AlGaN metasurface shows synergetic results positively increasing light-extraction efficiency. |
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| ISSN: | 1943-0655 |