Modeling of Etching Nano-surfaces of Indium Phosphide

This paper describes a mechanism for obtaining a regular porous structure InP, which is to use the method of photoelectrochemical etching. Through the use of simulation etching at the nanoscale, it is possible to get a regular uniform grid of nanopores on the surface of indium phosphide, which allow...

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Main Authors: S.L. Khrypko, V.V. Kidalov, E.V. Kolominska
Format: Article
Language:English
Published: Sumy State University 2015-03-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2015/1/articles/jnep_2015_V7_01003.pdf
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author S.L. Khrypko
V.V. Kidalov
E.V. Kolominska
author_facet S.L. Khrypko
V.V. Kidalov
E.V. Kolominska
author_sort S.L. Khrypko
collection DOAJ
description This paper describes a mechanism for obtaining a regular porous structure InP, which is to use the method of photoelectrochemical etching. Through the use of simulation etching at the nanoscale, it is possible to get a regular uniform grid of nanopores on the surface of indium phosphide, which allows us to understand the mechanisms and the establishment of technological regimes anodic structures indium phosphide to produce a variety of devices.
format Article
id doaj-art-5c5634a44cf444fa981de48d6034bbfe
institution Kabale University
issn 2077-6772
language English
publishDate 2015-03-01
publisher Sumy State University
record_format Article
series Журнал нано- та електронної фізики
spelling doaj-art-5c5634a44cf444fa981de48d6034bbfe2025-08-20T03:34:13ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722015-03-017101003-101003-3Modeling of Etching Nano-surfaces of Indium PhosphideS.L. Khrypko0V.V. Kidalov1E.V. Kolominska2Berdyansk State Pedagogical University, 4, Shmidta St., 71100 Berdyansk, UkraineBerdyansk State Pedagogical University, 4, Shmidta St., 71100 Berdyansk, UkraineBerdyansk State Pedagogical University, 4, Shmidta St., 71100 Berdyansk, UkraineThis paper describes a mechanism for obtaining a regular porous structure InP, which is to use the method of photoelectrochemical etching. Through the use of simulation etching at the nanoscale, it is possible to get a regular uniform grid of nanopores on the surface of indium phosphide, which allows us to understand the mechanisms and the establishment of technological regimes anodic structures indium phosphide to produce a variety of devices.http://jnep.sumdu.edu.ua/download/numbers/2015/1/articles/jnep_2015_V7_01003.pdfInPPorousModelingNano-surface
spellingShingle S.L. Khrypko
V.V. Kidalov
E.V. Kolominska
Modeling of Etching Nano-surfaces of Indium Phosphide
Журнал нано- та електронної фізики
InP
Porous
Modeling
Nano-surface
title Modeling of Etching Nano-surfaces of Indium Phosphide
title_full Modeling of Etching Nano-surfaces of Indium Phosphide
title_fullStr Modeling of Etching Nano-surfaces of Indium Phosphide
title_full_unstemmed Modeling of Etching Nano-surfaces of Indium Phosphide
title_short Modeling of Etching Nano-surfaces of Indium Phosphide
title_sort modeling of etching nano surfaces of indium phosphide
topic InP
Porous
Modeling
Nano-surface
url http://jnep.sumdu.edu.ua/download/numbers/2015/1/articles/jnep_2015_V7_01003.pdf
work_keys_str_mv AT slkhrypko modelingofetchingnanosurfacesofindiumphosphide
AT vvkidalov modelingofetchingnanosurfacesofindiumphosphide
AT evkolominska modelingofetchingnanosurfacesofindiumphosphide