Modeling of Etching Nano-surfaces of Indium Phosphide

This paper describes a mechanism for obtaining a regular porous structure InP, which is to use the method of photoelectrochemical etching. Through the use of simulation etching at the nanoscale, it is possible to get a regular uniform grid of nanopores on the surface of indium phosphide, which allow...

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Bibliographic Details
Main Authors: S.L. Khrypko, V.V. Kidalov, E.V. Kolominska
Format: Article
Language:English
Published: Sumy State University 2015-03-01
Series:Журнал нано- та електронної фізики
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Online Access:http://jnep.sumdu.edu.ua/download/numbers/2015/1/articles/jnep_2015_V7_01003.pdf
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Summary:This paper describes a mechanism for obtaining a regular porous structure InP, which is to use the method of photoelectrochemical etching. Through the use of simulation etching at the nanoscale, it is possible to get a regular uniform grid of nanopores on the surface of indium phosphide, which allows us to understand the mechanisms and the establishment of technological regimes anodic structures indium phosphide to produce a variety of devices.
ISSN:2077-6772