Optical Properties of a-SiC:H Thin Films Deposited by Magnetron Sputtering
In the present work a-SiC:H thin films were prepared using magnetron sputtering technique for different substrate temperatures from 100 °C to 290 °C. Their optical properties were studied using the ellipsometry technique. The experimental results show that the optical band gap of the films varies fr...
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2025-06-01
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| author | Christina Veneti Lykourgos Magafas Panagiota Papadopoulou |
| author_facet | Christina Veneti Lykourgos Magafas Panagiota Papadopoulou |
| author_sort | Christina Veneti |
| collection | DOAJ |
| description | In the present work a-SiC:H thin films were prepared using magnetron sputtering technique for different substrate temperatures from 100 °C to 290 °C. Their optical properties were studied using the ellipsometry technique. The experimental results show that the optical band gap of the films varies from 2.00 eV to 2.18 eV for the hydrogenated films, whereas the Eg is equal to 1.29 eV when the film does not contain hydrogen atoms and for Ts = 100 °C. The refractive index has been observed to remain stable in the region of 100 °C–220 °C, whereas it drops significantly when the temperature of 290 °C is reached. Additionally, the refractive index exhibits an inverse relationship with Eg as a function of Ts. Notably, these thin films were deposited 12 years ago, and their optical properties have remained stable since then. |
| format | Article |
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| institution | Kabale University |
| issn | 2673-3978 |
| language | English |
| publishDate | 2025-06-01 |
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| spelling | doaj-art-5c30d2e6f9b84f1990baef6b37716d2b2025-08-20T03:27:18ZengMDPI AGElectronic Materials2673-39782025-06-0162810.3390/electronicmat6020008Optical Properties of a-SiC:H Thin Films Deposited by Magnetron SputteringChristina Veneti0Lykourgos Magafas1Panagiota Papadopoulou2Department of Mechanical and Manufacturing Engineering, University of Cyprus, Nicosia 2109, CyprusDepartment of Informatics, Democritus University of Thrace, 65404 Kavala, GreeceDepartment of Physics, Democritus University of Thrace, 65404 Kavala, GreeceIn the present work a-SiC:H thin films were prepared using magnetron sputtering technique for different substrate temperatures from 100 °C to 290 °C. Their optical properties were studied using the ellipsometry technique. The experimental results show that the optical band gap of the films varies from 2.00 eV to 2.18 eV for the hydrogenated films, whereas the Eg is equal to 1.29 eV when the film does not contain hydrogen atoms and for Ts = 100 °C. The refractive index has been observed to remain stable in the region of 100 °C–220 °C, whereas it drops significantly when the temperature of 290 °C is reached. Additionally, the refractive index exhibits an inverse relationship with Eg as a function of Ts. Notably, these thin films were deposited 12 years ago, and their optical properties have remained stable since then.https://www.mdpi.com/2673-3978/6/2/8optical propertiesthin filmsamorphous semiconductorssilicon carbide |
| spellingShingle | Christina Veneti Lykourgos Magafas Panagiota Papadopoulou Optical Properties of a-SiC:H Thin Films Deposited by Magnetron Sputtering Electronic Materials optical properties thin films amorphous semiconductors silicon carbide |
| title | Optical Properties of a-SiC:H Thin Films Deposited by Magnetron Sputtering |
| title_full | Optical Properties of a-SiC:H Thin Films Deposited by Magnetron Sputtering |
| title_fullStr | Optical Properties of a-SiC:H Thin Films Deposited by Magnetron Sputtering |
| title_full_unstemmed | Optical Properties of a-SiC:H Thin Films Deposited by Magnetron Sputtering |
| title_short | Optical Properties of a-SiC:H Thin Films Deposited by Magnetron Sputtering |
| title_sort | optical properties of a sic h thin films deposited by magnetron sputtering |
| topic | optical properties thin films amorphous semiconductors silicon carbide |
| url | https://www.mdpi.com/2673-3978/6/2/8 |
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