Interface trap states induced underestimation of Schottky barrier height in metal-MX2 junctions
Abstract Understanding the interfaces between a contact metal and a two-dimensional (2D) semiconductor, as well as the dielectric gate stack and the same 2D material in transition metal dichalcogenide (TMD) based transistors, is a crucial step towards the introduction of TMD materials into advanced...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-07-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-025-00576-y |
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