Scalability of Phase Change Materials in Nanostructure Template
The scalability of In2Se3, one of the phase change materials, is investigated. By depositing the material onto a nanopatterned substrate, individual In2Se3 nanoclusters are confined in the nanosize pits with well-defined shape and dimension permitting the systematic study of the ultimate scaling lim...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2015/253296 |
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| author | Wei Zhang Biyun L. Jackson Ke Sun Jae Young Lee Shyh-Jer Huang Hsin-Chieh Yu Sheng-Po Chang Shoou-Jinn Chang Ya-Hong Xie |
| author_facet | Wei Zhang Biyun L. Jackson Ke Sun Jae Young Lee Shyh-Jer Huang Hsin-Chieh Yu Sheng-Po Chang Shoou-Jinn Chang Ya-Hong Xie |
| author_sort | Wei Zhang |
| collection | DOAJ |
| description | The scalability of In2Se3, one of the phase change materials, is investigated. By depositing the material onto a nanopatterned substrate, individual In2Se3 nanoclusters are confined in the nanosize pits with well-defined shape and dimension permitting the systematic study of the ultimate scaling limit of its use as a phase change memory element. In2Se3 of progressively smaller volume is heated inside a transmission electron microscope operating in diffraction mode. The volume at which the amorphous-crystalline transition can no longer be observed is taken as the ultimate scaling limit, which is approximately 5 nm3 for In2Se3. The physics for the existence of scaling limit is discussed. Using phase change memory elements in memory hierarchy is believed to reduce its energy consumption because they consume zero leakage power in memory cells. Therefore, the phase change memory applications are of great importance in terms of energy saving. |
| format | Article |
| id | doaj-art-5c13c8ebd29943d1814076eca364fdc7 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-5c13c8ebd29943d1814076eca364fdc72025-02-03T05:58:20ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2015-01-01201510.1155/2015/253296253296Scalability of Phase Change Materials in Nanostructure TemplateWei Zhang0Biyun L. Jackson1Ke Sun2Jae Young Lee3Shyh-Jer Huang4Hsin-Chieh Yu5Sheng-Po Chang6Shoou-Jinn Chang7Ya-Hong Xie8Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA 90095, USAPortland Technology Development, Intel Corporation, Hillsboro, OR 97124, USAWaferTech LLC, Camas, WA 98607, USAGLOBALFOUNDRIES, Inc., Milpitas, CA 95035, USAAdvanced Optoelectronic Technology Center, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, TaiwanAdvanced Optoelectronic Technology Center, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, TaiwanAdvanced Optoelectronic Technology Center, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, TaiwanAdvanced Optoelectronic Technology Center, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, TaiwanDepartment of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA 90095, USAThe scalability of In2Se3, one of the phase change materials, is investigated. By depositing the material onto a nanopatterned substrate, individual In2Se3 nanoclusters are confined in the nanosize pits with well-defined shape and dimension permitting the systematic study of the ultimate scaling limit of its use as a phase change memory element. In2Se3 of progressively smaller volume is heated inside a transmission electron microscope operating in diffraction mode. The volume at which the amorphous-crystalline transition can no longer be observed is taken as the ultimate scaling limit, which is approximately 5 nm3 for In2Se3. The physics for the existence of scaling limit is discussed. Using phase change memory elements in memory hierarchy is believed to reduce its energy consumption because they consume zero leakage power in memory cells. Therefore, the phase change memory applications are of great importance in terms of energy saving.http://dx.doi.org/10.1155/2015/253296 |
| spellingShingle | Wei Zhang Biyun L. Jackson Ke Sun Jae Young Lee Shyh-Jer Huang Hsin-Chieh Yu Sheng-Po Chang Shoou-Jinn Chang Ya-Hong Xie Scalability of Phase Change Materials in Nanostructure Template International Journal of Photoenergy |
| title | Scalability of Phase Change Materials in Nanostructure Template |
| title_full | Scalability of Phase Change Materials in Nanostructure Template |
| title_fullStr | Scalability of Phase Change Materials in Nanostructure Template |
| title_full_unstemmed | Scalability of Phase Change Materials in Nanostructure Template |
| title_short | Scalability of Phase Change Materials in Nanostructure Template |
| title_sort | scalability of phase change materials in nanostructure template |
| url | http://dx.doi.org/10.1155/2015/253296 |
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