Free-standing two-dimensional ferro-ionic memristor
Abstract Two-dimensional (2D) ferroelectric materials have emerged as significant platforms for multi-functional three-dimensional (3D) integrated electronic devices. Among 2D ferroelectric materials, ferro-ionic CuInP2S6 has the potential to achieve the versatile advances in neuromorphic computing...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-06-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-48810-3 |
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| author | Jinhyoung Lee Gunhoo Woo Jinill Cho Sihoon Son Hyelim Shin Hyunho Seok Min-Jae Kim Eungchul Kim Ziyang Wang Boseok Kang Won-Jun Jang Taesung Kim |
| author_facet | Jinhyoung Lee Gunhoo Woo Jinill Cho Sihoon Son Hyelim Shin Hyunho Seok Min-Jae Kim Eungchul Kim Ziyang Wang Boseok Kang Won-Jun Jang Taesung Kim |
| author_sort | Jinhyoung Lee |
| collection | DOAJ |
| description | Abstract Two-dimensional (2D) ferroelectric materials have emerged as significant platforms for multi-functional three-dimensional (3D) integrated electronic devices. Among 2D ferroelectric materials, ferro-ionic CuInP2S6 has the potential to achieve the versatile advances in neuromorphic computing systems due to its phase tunability and ferro-ionic characteristics. As CuInP2S6 exhibits a ferroelectric phase with insulating properties at room temperature, the external temperature and electrical field should be required to activate the ferro-ionic conduction. Nevertheless, such external conditions inevitably facilitate stochastic ionic conduction, which completely limits the practical applications of 2D ferro-ionic materials. Herein, free-standing 2D ferroelectric heterostructure is mechanically manipulated for nano-confined conductive filaments growth in free-standing 2D ferro-ionic memristor. The ultra-high mechanical bending is selectively facilitated at the free-standing area to spatially activate the ferro-ionic conduction, which allows the deterministic local positioning of Cu+ ion transport. According to the local flexoelectric engineering, 5.76×102-fold increased maximum current is observed within vertical shear strain 720 nN, which is theoretically supported by the 3D flexoelectric simulation. In conclusion, we envision that our universal free-standing platform can provide the extendable geometric solution for ultra-efficient self-powered system and reliable neuromorphic device. |
| format | Article |
| id | doaj-art-5bfdc153d8294ccb8b82c3c8034771e9 |
| institution | DOAJ |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-06-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-5bfdc153d8294ccb8b82c3c8034771e92025-08-20T02:50:01ZengNature PortfolioNature Communications2041-17232024-06-0115111110.1038/s41467-024-48810-3Free-standing two-dimensional ferro-ionic memristorJinhyoung Lee0Gunhoo Woo1Jinill Cho2Sihoon Son3Hyelim Shin4Hyunho Seok5Min-Jae Kim6Eungchul Kim7Ziyang Wang8Boseok Kang9Won-Jun Jang10Taesung Kim11School of Mechanical Engineering, Sungkyunkwan University (SKKU)SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan UniversitySchool of Mechanical Engineering, Sungkyunkwan University (SKKU)SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan UniversityDepartment of Semiconductor Convergence Engineering, Sungkyunkwan UniversitySKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan UniversitySKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan UniversityAVP Process Development Team, Samsung ElectronicsSchool of Mechanical Engineering, Sungkyunkwan University (SKKU)SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan UniversityCenter for Quantum Nanoscience, Institute for Basic Science (IBS)School of Mechanical Engineering, Sungkyunkwan University (SKKU)Abstract Two-dimensional (2D) ferroelectric materials have emerged as significant platforms for multi-functional three-dimensional (3D) integrated electronic devices. Among 2D ferroelectric materials, ferro-ionic CuInP2S6 has the potential to achieve the versatile advances in neuromorphic computing systems due to its phase tunability and ferro-ionic characteristics. As CuInP2S6 exhibits a ferroelectric phase with insulating properties at room temperature, the external temperature and electrical field should be required to activate the ferro-ionic conduction. Nevertheless, such external conditions inevitably facilitate stochastic ionic conduction, which completely limits the practical applications of 2D ferro-ionic materials. Herein, free-standing 2D ferroelectric heterostructure is mechanically manipulated for nano-confined conductive filaments growth in free-standing 2D ferro-ionic memristor. The ultra-high mechanical bending is selectively facilitated at the free-standing area to spatially activate the ferro-ionic conduction, which allows the deterministic local positioning of Cu+ ion transport. According to the local flexoelectric engineering, 5.76×102-fold increased maximum current is observed within vertical shear strain 720 nN, which is theoretically supported by the 3D flexoelectric simulation. In conclusion, we envision that our universal free-standing platform can provide the extendable geometric solution for ultra-efficient self-powered system and reliable neuromorphic device.https://doi.org/10.1038/s41467-024-48810-3 |
| spellingShingle | Jinhyoung Lee Gunhoo Woo Jinill Cho Sihoon Son Hyelim Shin Hyunho Seok Min-Jae Kim Eungchul Kim Ziyang Wang Boseok Kang Won-Jun Jang Taesung Kim Free-standing two-dimensional ferro-ionic memristor Nature Communications |
| title | Free-standing two-dimensional ferro-ionic memristor |
| title_full | Free-standing two-dimensional ferro-ionic memristor |
| title_fullStr | Free-standing two-dimensional ferro-ionic memristor |
| title_full_unstemmed | Free-standing two-dimensional ferro-ionic memristor |
| title_short | Free-standing two-dimensional ferro-ionic memristor |
| title_sort | free standing two dimensional ferro ionic memristor |
| url | https://doi.org/10.1038/s41467-024-48810-3 |
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