In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs
Abstract Quantum-dot optoelectronics, pivotal for lighting, lasing and photovoltaics, rely on nanocrystalline oxide electron-injection layer. Here, we discover that the prevalent surface magnesium-modified zinc oxide electron-injection layer possesses poor n-type attributes, leading to the suboptima...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-04-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-58471-5 |
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| author | Yizhen Zheng Xing Lin Jiongzhao Li Jianan Chen Wenhao Wu Zixuan Song Yuan Gao Zhuang Hu Huifeng Wang Zikang Ye Haiyan Qin Xiaogang Peng |
| author_facet | Yizhen Zheng Xing Lin Jiongzhao Li Jianan Chen Wenhao Wu Zixuan Song Yuan Gao Zhuang Hu Huifeng Wang Zikang Ye Haiyan Qin Xiaogang Peng |
| author_sort | Yizhen Zheng |
| collection | DOAJ |
| description | Abstract Quantum-dot optoelectronics, pivotal for lighting, lasing and photovoltaics, rely on nanocrystalline oxide electron-injection layer. Here, we discover that the prevalent surface magnesium-modified zinc oxide electron-injection layer possesses poor n-type attributes, leading to the suboptimal and encapsulation-resin-sensitive performance of quantum-dot light-emitting diodes. A heavily n-doped nanocrystalline electron-injection layer—exhibiting ohmic transport with 1000 times higher electron conductivity and improved hole blockage—is developed via a simple reductive treatment. The resulting sub-bandgap-driven quantum-dot light-emitting diodes exhibit optimal efficiency and extraordinarily-high brightness, surpassing current benchmarks by at least 2.6-fold, and reaching levels suitable for quantum-dot laser diodes with only modest bias. This breakthrough further empowers white-lighting quantum-dot light-emitting diodes to exceed the 2035 U.S. Department of Energy’s targets for general lighting, which currently accounts for ~15% of global electricity consumption. Our work opens a door for understanding and optimizing carrier transport in nanocrystalline semiconductors shared by various types of solution-processed optoelectronic devices. |
| format | Article |
| id | doaj-art-5bbbdeb3749443fc80ebd70e23634aa1 |
| institution | OA Journals |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-5bbbdeb3749443fc80ebd70e23634aa12025-08-20T02:17:01ZengNature PortfolioNature Communications2041-17232025-04-0116111210.1038/s41467-025-58471-5In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDsYizhen Zheng0Xing Lin1Jiongzhao Li2Jianan Chen3Wenhao Wu4Zixuan Song5Yuan Gao6Zhuang Hu7Huifeng Wang8Zikang Ye9Haiyan Qin10Xiaogang Peng11Zhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, and Department of Chemistry, Zhejiang UniversityZhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, and College of Information Science and Electronic Engineering, Zhejiang UniversityZhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, and Department of Chemistry, Zhejiang UniversityZhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, and Department of Chemistry, Zhejiang UniversityZhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, and Department of Chemistry, Zhejiang UniversityZhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, and College of Information Science and Electronic Engineering, Zhejiang UniversityNajing Technology Corporation Ltd.Zhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, and Department of Chemistry, Zhejiang UniversityZhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, and Department of Chemistry, Zhejiang UniversityZhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, and Department of Chemistry, Zhejiang UniversityZhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, and Department of Chemistry, Zhejiang UniversityZhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, and Department of Chemistry, Zhejiang UniversityAbstract Quantum-dot optoelectronics, pivotal for lighting, lasing and photovoltaics, rely on nanocrystalline oxide electron-injection layer. Here, we discover that the prevalent surface magnesium-modified zinc oxide electron-injection layer possesses poor n-type attributes, leading to the suboptimal and encapsulation-resin-sensitive performance of quantum-dot light-emitting diodes. A heavily n-doped nanocrystalline electron-injection layer—exhibiting ohmic transport with 1000 times higher electron conductivity and improved hole blockage—is developed via a simple reductive treatment. The resulting sub-bandgap-driven quantum-dot light-emitting diodes exhibit optimal efficiency and extraordinarily-high brightness, surpassing current benchmarks by at least 2.6-fold, and reaching levels suitable for quantum-dot laser diodes with only modest bias. This breakthrough further empowers white-lighting quantum-dot light-emitting diodes to exceed the 2035 U.S. Department of Energy’s targets for general lighting, which currently accounts for ~15% of global electricity consumption. Our work opens a door for understanding and optimizing carrier transport in nanocrystalline semiconductors shared by various types of solution-processed optoelectronic devices.https://doi.org/10.1038/s41467-025-58471-5 |
| spellingShingle | Yizhen Zheng Xing Lin Jiongzhao Li Jianan Chen Wenhao Wu Zixuan Song Yuan Gao Zhuang Hu Huifeng Wang Zikang Ye Haiyan Qin Xiaogang Peng In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs Nature Communications |
| title | In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs |
| title_full | In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs |
| title_fullStr | In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs |
| title_full_unstemmed | In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs |
| title_short | In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs |
| title_sort | in situ n doped nanocrystalline electron injection layer for general lighting quantum dot leds |
| url | https://doi.org/10.1038/s41467-025-58471-5 |
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