In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs
Abstract Quantum-dot optoelectronics, pivotal for lighting, lasing and photovoltaics, rely on nanocrystalline oxide electron-injection layer. Here, we discover that the prevalent surface magnesium-modified zinc oxide electron-injection layer possesses poor n-type attributes, leading to the suboptima...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-04-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-58471-5 |
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| Summary: | Abstract Quantum-dot optoelectronics, pivotal for lighting, lasing and photovoltaics, rely on nanocrystalline oxide electron-injection layer. Here, we discover that the prevalent surface magnesium-modified zinc oxide electron-injection layer possesses poor n-type attributes, leading to the suboptimal and encapsulation-resin-sensitive performance of quantum-dot light-emitting diodes. A heavily n-doped nanocrystalline electron-injection layer—exhibiting ohmic transport with 1000 times higher electron conductivity and improved hole blockage—is developed via a simple reductive treatment. The resulting sub-bandgap-driven quantum-dot light-emitting diodes exhibit optimal efficiency and extraordinarily-high brightness, surpassing current benchmarks by at least 2.6-fold, and reaching levels suitable for quantum-dot laser diodes with only modest bias. This breakthrough further empowers white-lighting quantum-dot light-emitting diodes to exceed the 2035 U.S. Department of Energy’s targets for general lighting, which currently accounts for ~15% of global electricity consumption. Our work opens a door for understanding and optimizing carrier transport in nanocrystalline semiconductors shared by various types of solution-processed optoelectronic devices. |
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| ISSN: | 2041-1723 |