Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs
Abstract We propose a detailed approach for modeling the C–V characteristic of complex heterostructure-based devices, investigating the case of UV-C LEDs. The study is based on combined experimental measurements and TCAD simulations, and explores: i) the impact of defects at critical interfaces on t...
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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-04-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-025-95015-9 |
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| author | Nicola Roccato Francesco Piva Matteo Buffolo Carlo De Santi Nicola Trivellin Marcel Schilling Anton Muhin Jakob Höpfner Martin Guttmann Tim Wernicke Michael Kneissl Gaudenzio Meneghesso Enrico Zanoni Matteo Meneghini |
| author_facet | Nicola Roccato Francesco Piva Matteo Buffolo Carlo De Santi Nicola Trivellin Marcel Schilling Anton Muhin Jakob Höpfner Martin Guttmann Tim Wernicke Michael Kneissl Gaudenzio Meneghesso Enrico Zanoni Matteo Meneghini |
| author_sort | Nicola Roccato |
| collection | DOAJ |
| description | Abstract We propose a detailed approach for modeling the C–V characteristic of complex heterostructure-based devices, investigating the case of UV-C LEDs. The study is based on combined experimental measurements and TCAD simulations, and explores: i) the impact of defects at critical interfaces on the apparent charge profile; ii) the dependence of the C–V characteristic on the efficiency of carrier injection toward the QWs; iii) the impact of a non-ideal partially-rectifying p-contact on the C–V curves. By accounting for these processes and non-idealities, we were able to achieve a good reproduction of the experimental C–V characteristic and of the corresponding apparent charge profile. The result presented in this paper provide relevant information for the investigation of specific device features, based on simple electrical characterizations. |
| format | Article |
| id | doaj-art-5b433f15e79d493ea098339cb5b5bdfd |
| institution | OA Journals |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-5b433f15e79d493ea098339cb5b5bdfd2025-08-20T02:24:29ZengNature PortfolioScientific Reports2045-23222025-04-0115111010.1038/s41598-025-95015-9Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDsNicola Roccato0Francesco Piva1Matteo Buffolo2Carlo De Santi3Nicola Trivellin4Marcel Schilling5Anton Muhin6Jakob Höpfner7Martin Guttmann8Tim Wernicke9Michael Kneissl10Gaudenzio Meneghesso11Enrico Zanoni12Matteo Meneghini13Department of Information Engineering, University of PadovaDepartment of Information Engineering, University of PadovaDepartment of Information Engineering, University of PadovaDepartment of Information Engineering, University of PadovaDepartment of Information Engineering, University of PadovaInsitute of Solid State Physics, Technische Universität BerlinInsitute of Solid State Physics, Technische Universität BerlinInsitute of Solid State Physics, Technische Universität BerlinFerdinand-Braun-Institut, Leibnizinstitut Für Höchstfrequenztechnik gGmbHInsitute of Solid State Physics, Technische Universität BerlinInsitute of Solid State Physics, Technische Universität BerlinDepartment of Information Engineering, University of PadovaDepartment of Information Engineering, University of PadovaDepartment of Information Engineering, University of PadovaAbstract We propose a detailed approach for modeling the C–V characteristic of complex heterostructure-based devices, investigating the case of UV-C LEDs. The study is based on combined experimental measurements and TCAD simulations, and explores: i) the impact of defects at critical interfaces on the apparent charge profile; ii) the dependence of the C–V characteristic on the efficiency of carrier injection toward the QWs; iii) the impact of a non-ideal partially-rectifying p-contact on the C–V curves. By accounting for these processes and non-idealities, we were able to achieve a good reproduction of the experimental C–V characteristic and of the corresponding apparent charge profile. The result presented in this paper provide relevant information for the investigation of specific device features, based on simple electrical characterizations.https://doi.org/10.1038/s41598-025-95015-9 |
| spellingShingle | Nicola Roccato Francesco Piva Matteo Buffolo Carlo De Santi Nicola Trivellin Marcel Schilling Anton Muhin Jakob Höpfner Martin Guttmann Tim Wernicke Michael Kneissl Gaudenzio Meneghesso Enrico Zanoni Matteo Meneghini Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs Scientific Reports |
| title | Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs |
| title_full | Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs |
| title_fullStr | Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs |
| title_full_unstemmed | Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs |
| title_short | Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs |
| title_sort | modeling the capacitance voltage characteristics of algan based uv c leds |
| url | https://doi.org/10.1038/s41598-025-95015-9 |
| work_keys_str_mv | AT nicolaroccato modelingthecapacitancevoltagecharacteristicsofalganbaseduvcleds AT francescopiva modelingthecapacitancevoltagecharacteristicsofalganbaseduvcleds AT matteobuffolo modelingthecapacitancevoltagecharacteristicsofalganbaseduvcleds AT carlodesanti modelingthecapacitancevoltagecharacteristicsofalganbaseduvcleds AT nicolatrivellin modelingthecapacitancevoltagecharacteristicsofalganbaseduvcleds AT marcelschilling modelingthecapacitancevoltagecharacteristicsofalganbaseduvcleds AT antonmuhin modelingthecapacitancevoltagecharacteristicsofalganbaseduvcleds AT jakobhopfner modelingthecapacitancevoltagecharacteristicsofalganbaseduvcleds AT martinguttmann modelingthecapacitancevoltagecharacteristicsofalganbaseduvcleds AT timwernicke modelingthecapacitancevoltagecharacteristicsofalganbaseduvcleds AT michaelkneissl modelingthecapacitancevoltagecharacteristicsofalganbaseduvcleds AT gaudenziomeneghesso modelingthecapacitancevoltagecharacteristicsofalganbaseduvcleds AT enricozanoni modelingthecapacitancevoltagecharacteristicsofalganbaseduvcleds AT matteomeneghini modelingthecapacitancevoltagecharacteristicsofalganbaseduvcleds |