Evaluation and Characterization of High-Uniformity SiN<sub>x</sub> Thin Film with Controllable Refractive Index by Home-Made Cat-CVD Based on Orthogonal Experiments
Silicon nitride (SiN<sub>x</sub>) thin film is a promising coating with great physiochemical and optical properties. However, the preparation of films with good comprehensive properties still faces challenges. This study focused on developing a method for the preparation of uniform SiN&l...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-02-01
|
| Series: | Molecules |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1420-3049/30/5/1091 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Silicon nitride (SiN<sub>x</sub>) thin film is a promising coating with great physiochemical and optical properties. However, the preparation of films with good comprehensive properties still faces challenges. This study focused on developing a method for the preparation of uniform SiN<sub>x</sub> thin film with a controllable refractive index using home-made catalytic chemical vapor deposition (Cat-CVD) equipment. Orthogonal experimental design was employed to investigate the effects of four key influence factors, including reaction pressure, the ratio of SiH<sub>4</sub> to NH<sub>3</sub>, the ratio of SiH<sub>4</sub> to H<sub>2</sub>, and substrate temperature. The response parameters evaluated were the refractive index, extinction coefficient, uniformity, and deposition rate of SiN<sub>x</sub> thin film. Compared with the single-factor variable tests, an orthogonal experiment could obtain the optimal preparation process of the SiN<sub>x</sub> thin film with the best comprehensive quality through the least number of experiments. At the same time, the microstructures of SiN<sub>x</sub> thin film were analyzed by various characterization methods, including Fourier-transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM), to research the relationship between preparation factors and the properties of SiN<sub>x</sub> thin film. This paper provides the theoretical guidance for fine-regulating the properties of SiNx thin film in practical applications. |
|---|---|
| ISSN: | 1420-3049 |