Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film
The electrical conduction and bipolar switching properties of resistive random access memory (RRAM) cells with transparent calcium bismuth titanate (CaBi4Ti4O15—CBTi144) thin films were investigated. Experimentally, the (119)-oriented CBTi144 thin films were deposited onto the ITO/glass substrates b...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/425085 |
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| _version_ | 1849410729114861568 |
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| author | Jian-Yang Lin Chia-Lin Wu |
| author_facet | Jian-Yang Lin Chia-Lin Wu |
| author_sort | Jian-Yang Lin |
| collection | DOAJ |
| description | The electrical conduction and bipolar switching properties of resistive random access memory (RRAM) cells with transparent calcium bismuth titanate (CaBi4Ti4O15—CBTi144) thin films were investigated. Experimentally, the (119)-oriented CBTi144 thin films were deposited onto the ITO/glass substrates by RF magnetron sputtering followed by rapid thermal annealing (RTA) at a temperature range of 450–550°C. The surface morphologies and crystal structures of the CBTi144 thin films were examined by using field-emission scanning electron microscopy and X-ray diffraction measurements. The on/off ratio and switching behaviors of the transparent Al/CBTi144/ITO/glass RRAM devices were further discussed in this work. |
| format | Article |
| id | doaj-art-5afccbf234a742bfac4a6e79c072fe3b |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-5afccbf234a742bfac4a6e79c072fe3b2025-08-20T03:35:00ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422014-01-01201410.1155/2014/425085425085Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 FilmJian-Yang Lin0Chia-Lin Wu1Department of Electronic Engineering, National Yunlin University of Science and Technology, Douliou 64002, TaiwanGraduate School of Engineering Science & Technology, National Yunlin University of Science and Technology, Douliou 64002, TaiwanThe electrical conduction and bipolar switching properties of resistive random access memory (RRAM) cells with transparent calcium bismuth titanate (CaBi4Ti4O15—CBTi144) thin films were investigated. Experimentally, the (119)-oriented CBTi144 thin films were deposited onto the ITO/glass substrates by RF magnetron sputtering followed by rapid thermal annealing (RTA) at a temperature range of 450–550°C. The surface morphologies and crystal structures of the CBTi144 thin films were examined by using field-emission scanning electron microscopy and X-ray diffraction measurements. The on/off ratio and switching behaviors of the transparent Al/CBTi144/ITO/glass RRAM devices were further discussed in this work.http://dx.doi.org/10.1155/2014/425085 |
| spellingShingle | Jian-Yang Lin Chia-Lin Wu Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film Advances in Materials Science and Engineering |
| title | Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film |
| title_full | Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film |
| title_fullStr | Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film |
| title_full_unstemmed | Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film |
| title_short | Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film |
| title_sort | bipolar switching characteristics of rram cells with cabi4ti4o15 film |
| url | http://dx.doi.org/10.1155/2014/425085 |
| work_keys_str_mv | AT jianyanglin bipolarswitchingcharacteristicsofrramcellswithcabi4ti4o15film AT chialinwu bipolarswitchingcharacteristicsofrramcellswithcabi4ti4o15film |