Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS_{2} through Coulomb Engineering
High-speed, nonvolatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication. Despite significant progress in developing phase-change and ferroelectric materials, achieving highly efficient, reversible, rapid swi...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2025-06-01
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| Series: | Physical Review X |
| Online Access: | http://doi.org/10.1103/PhysRevX.15.021081 |
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| author | Jing Liang Yuan Xie Dongyang Yang Shangyi Guo Kenji Watanabe Takashi Taniguchi Jerry I. Dadap David Jones Ziliang Ye |
| author_facet | Jing Liang Yuan Xie Dongyang Yang Shangyi Guo Kenji Watanabe Takashi Taniguchi Jerry I. Dadap David Jones Ziliang Ye |
| author_sort | Jing Liang |
| collection | DOAJ |
| description | High-speed, nonvolatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication. Despite significant progress in developing phase-change and ferroelectric materials, achieving highly efficient, reversible, rapid switching of optical properties has remained a challenge. Recently, sliding ferroelectricity has been discovered in 2D semiconductors, which also host strong excitonic effects. Here, we demonstrate that these materials enable nanosecond ferroelectric switching in the complex refractive index, substantially modulating their linear optical responses. The maximum index modulation reaches about 4, resulting in a relative reflectance change exceeding 85%. Both on and off switching occur within 2.5 ns, with switching energy at femtojoule levels. The switching mechanism is driven by tuning the excitonic peak splitting of a rhombohedral molybdenum disulfide bilayer in an engineered Coulomb screening environment. This new switching mechanism establishes a new direction for developing high-speed, nonvolatile optical memories and highly efficient, compact reconfigurable photonic devices. Additionally, the demonstrated imaging technique offers a rapid method to characterize domains and domain walls in 2D semiconductors with rhombohedral stacking. |
| format | Article |
| id | doaj-art-5a8faff377ad4300a723f9b2ba8f1979 |
| institution | Kabale University |
| issn | 2160-3308 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review X |
| spelling | doaj-art-5a8faff377ad4300a723f9b2ba8f19792025-08-20T03:24:48ZengAmerican Physical SocietyPhysical Review X2160-33082025-06-0115202108110.1103/PhysRevX.15.021081Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS_{2} through Coulomb EngineeringJing LiangYuan XieDongyang YangShangyi GuoKenji WatanabeTakashi TaniguchiJerry I. DadapDavid JonesZiliang YeHigh-speed, nonvolatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication. Despite significant progress in developing phase-change and ferroelectric materials, achieving highly efficient, reversible, rapid switching of optical properties has remained a challenge. Recently, sliding ferroelectricity has been discovered in 2D semiconductors, which also host strong excitonic effects. Here, we demonstrate that these materials enable nanosecond ferroelectric switching in the complex refractive index, substantially modulating their linear optical responses. The maximum index modulation reaches about 4, resulting in a relative reflectance change exceeding 85%. Both on and off switching occur within 2.5 ns, with switching energy at femtojoule levels. The switching mechanism is driven by tuning the excitonic peak splitting of a rhombohedral molybdenum disulfide bilayer in an engineered Coulomb screening environment. This new switching mechanism establishes a new direction for developing high-speed, nonvolatile optical memories and highly efficient, compact reconfigurable photonic devices. Additionally, the demonstrated imaging technique offers a rapid method to characterize domains and domain walls in 2D semiconductors with rhombohedral stacking.http://doi.org/10.1103/PhysRevX.15.021081 |
| spellingShingle | Jing Liang Yuan Xie Dongyang Yang Shangyi Guo Kenji Watanabe Takashi Taniguchi Jerry I. Dadap David Jones Ziliang Ye Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS_{2} through Coulomb Engineering Physical Review X |
| title | Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS_{2} through Coulomb Engineering |
| title_full | Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS_{2} through Coulomb Engineering |
| title_fullStr | Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS_{2} through Coulomb Engineering |
| title_full_unstemmed | Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS_{2} through Coulomb Engineering |
| title_short | Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS_{2} through Coulomb Engineering |
| title_sort | nanosecond ferroelectric switching of intralayer excitons in bilayer 3r mos 2 through coulomb engineering |
| url | http://doi.org/10.1103/PhysRevX.15.021081 |
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