III-nitride memristors: materials, devices, and applications
Memristors, with their compactness, nonvolatile storage, and dynamic resistance modulation, are poised to revolutionize next-generation memory and neuromorphic computing paradigms. III-nitride materials, such as boron nitride (BN), gallium nitride (GaN), and aluminum nitride (AlN), exhibit exception...
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| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Materials Futures |
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| Online Access: | https://doi.org/10.1088/2752-5724/ade5be |
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| _version_ | 1849701317836013568 |
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| author | Yang Yang Haotian Li Qilin Hua |
| author_facet | Yang Yang Haotian Li Qilin Hua |
| author_sort | Yang Yang |
| collection | DOAJ |
| description | Memristors, with their compactness, nonvolatile storage, and dynamic resistance modulation, are poised to revolutionize next-generation memory and neuromorphic computing paradigms. III-nitride materials, such as boron nitride (BN), gallium nitride (GaN), and aluminum nitride (AlN), exhibit exceptional properties for advancing memristive technologies, including wide bandgaps (3.4–6.2 eV), high electron mobility (10 ^2 –10 ^3 cm ^2 (V·s) ^−1 ), high thermal conductivity (up to 400 W (m·K) ^−1 ), and robust resistance to harsh environments (e.g. extreme temperatures, radiation). Coupled with inherent complementary metal-oxide-semiconductor (CMOS) compatibility, these attributes position nitride-based memristors as a transformative platform for scalable, energy-efficient, and reliable electronics. In this review, we systematically examine recent advancements in III-nitride memristors, with a focus on materials engineering, device structures, and emerging applications. We begin by outlining the unique advantages of III-nitride materials for memristor design, followed by a critical analysis of progress in BN, GaN, AlN, and AlScN-based devices. We then explore their hardware-level implementations, demonstrating their role in next-generation chip architectures. Finally, we discuss the challenges and future directions to advance nitride-based memristive technologies. Notably, III-nitride memristors unlock unprecedented opportunities for high-performance electronics in extreme environments while bridging the gap between bio-inspired computing paradigms and hardware scalability, enabling adaptive, high-speed, and energy-efficient intelligent systems. |
| format | Article |
| id | doaj-art-5a8ccdd7cf0f45f8840560b07fdb5ce4 |
| institution | DOAJ |
| issn | 2752-5724 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Futures |
| spelling | doaj-art-5a8ccdd7cf0f45f8840560b07fdb5ce42025-08-20T03:17:58ZengIOP PublishingMaterials Futures2752-57242025-01-014303270110.1088/2752-5724/ade5beIII-nitride memristors: materials, devices, and applicationsYang Yang0Haotian Li1Qilin Hua2https://orcid.org/0000-0002-5269-5532School of Integrated Circuits and Electronics, Beijing Institute of Technology , Beijing 100081, People’s Republic of ChinaSchool of Integrated Circuits and Electronics, Beijing Institute of Technology , Beijing 100081, People’s Republic of ChinaSchool of Integrated Circuits and Electronics, Beijing Institute of Technology , Beijing 100081, People’s Republic of ChinaMemristors, with their compactness, nonvolatile storage, and dynamic resistance modulation, are poised to revolutionize next-generation memory and neuromorphic computing paradigms. III-nitride materials, such as boron nitride (BN), gallium nitride (GaN), and aluminum nitride (AlN), exhibit exceptional properties for advancing memristive technologies, including wide bandgaps (3.4–6.2 eV), high electron mobility (10 ^2 –10 ^3 cm ^2 (V·s) ^−1 ), high thermal conductivity (up to 400 W (m·K) ^−1 ), and robust resistance to harsh environments (e.g. extreme temperatures, radiation). Coupled with inherent complementary metal-oxide-semiconductor (CMOS) compatibility, these attributes position nitride-based memristors as a transformative platform for scalable, energy-efficient, and reliable electronics. In this review, we systematically examine recent advancements in III-nitride memristors, with a focus on materials engineering, device structures, and emerging applications. We begin by outlining the unique advantages of III-nitride materials for memristor design, followed by a critical analysis of progress in BN, GaN, AlN, and AlScN-based devices. We then explore their hardware-level implementations, demonstrating their role in next-generation chip architectures. Finally, we discuss the challenges and future directions to advance nitride-based memristive technologies. Notably, III-nitride memristors unlock unprecedented opportunities for high-performance electronics in extreme environments while bridging the gap between bio-inspired computing paradigms and hardware scalability, enabling adaptive, high-speed, and energy-efficient intelligent systems.https://doi.org/10.1088/2752-5724/ade5bememristorIII-nitridenonvolatileneuromorphic computingwurtzitepiezoelectric |
| spellingShingle | Yang Yang Haotian Li Qilin Hua III-nitride memristors: materials, devices, and applications Materials Futures memristor III-nitride nonvolatile neuromorphic computing wurtzite piezoelectric |
| title | III-nitride memristors: materials, devices, and applications |
| title_full | III-nitride memristors: materials, devices, and applications |
| title_fullStr | III-nitride memristors: materials, devices, and applications |
| title_full_unstemmed | III-nitride memristors: materials, devices, and applications |
| title_short | III-nitride memristors: materials, devices, and applications |
| title_sort | iii nitride memristors materials devices and applications |
| topic | memristor III-nitride nonvolatile neuromorphic computing wurtzite piezoelectric |
| url | https://doi.org/10.1088/2752-5724/ade5be |
| work_keys_str_mv | AT yangyang iiinitridememristorsmaterialsdevicesandapplications AT haotianli iiinitridememristorsmaterialsdevicesandapplications AT qilinhua iiinitridememristorsmaterialsdevicesandapplications |