Realizing Excellent n‐ and p‐Type Niobium‐Based Half‐Heusler Compounds Based on Thermoelectric Properties and High‐Temperature Stability
Abstract Half‐Heusler (HH) compounds are currently promising thermoelectric (TE) materials due to their outstanding performance. For reliable n‐ and p‐type HH compounds, the dimensionless figure of merit zT is reported as greater than unity. However, to develop a high‐performance TE module, zT, high...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2020-06-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202000083 |
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