Optimization of GaN Bent Waveguides in the Visible Spectrum for Reduced Insertion Loss

The development of GaN-based photonic integrated chips has attracted significant attention for visible light communication systems due to their direct bandgap and excellent optical properties across the visible spectrum. However, achieving compact and efficient light routing through bent waveguides...

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Main Authors: Wendi Li, Huiping Yin, Qian Fang, Feifei Qin, Zheng Shi, Yongjin Wang, Xin Li
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Nanomaterials
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Online Access:https://www.mdpi.com/2079-4991/15/3/151
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author Wendi Li
Huiping Yin
Qian Fang
Feifei Qin
Zheng Shi
Yongjin Wang
Xin Li
author_facet Wendi Li
Huiping Yin
Qian Fang
Feifei Qin
Zheng Shi
Yongjin Wang
Xin Li
author_sort Wendi Li
collection DOAJ
description The development of GaN-based photonic integrated chips has attracted significant attention for visible light communication systems due to their direct bandgap and excellent optical properties across the visible spectrum. However, achieving compact and efficient light routing through bent waveguides remains challenging due to high insertion losses. This paper presents a comprehensive investigation of GaN bent waveguides optimization for visible light photonic integrated chips. Through systematic simulation analysis, we examined the effects of bending angle, process optimization approaches, and geometric parameters on insertion loss characteristics. The back-side thinning process demonstrates superior performance compared to front-side etching, reducing the insertion loss of 90° bends from 1.80 dB to 0.71 dB. Further optimization using silver reflection layers achieves an insertion loss of 0.57 dB. The optimized structure shows excellent performance in the blue-green spectral range (420–500 nm) with insertion losses below 0.9 dB, providing practical solutions for compact GaN photonic integrated chips in visible light communications.
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series Nanomaterials
spelling doaj-art-5a35b6bd6fd94f239b8d7d91fa227b132025-08-20T02:48:10ZengMDPI AGNanomaterials2079-49912025-01-0115315110.3390/nano15030151Optimization of GaN Bent Waveguides in the Visible Spectrum for Reduced Insertion LossWendi Li0Huiping Yin1Qian Fang2Feifei Qin3Zheng Shi4Yongjin Wang5Xin Li6GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210003, ChinaGaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210003, ChinaGaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210003, ChinaGaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210003, ChinaGaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210003, ChinaGaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210003, ChinaGaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210003, ChinaThe development of GaN-based photonic integrated chips has attracted significant attention for visible light communication systems due to their direct bandgap and excellent optical properties across the visible spectrum. However, achieving compact and efficient light routing through bent waveguides remains challenging due to high insertion losses. This paper presents a comprehensive investigation of GaN bent waveguides optimization for visible light photonic integrated chips. Through systematic simulation analysis, we examined the effects of bending angle, process optimization approaches, and geometric parameters on insertion loss characteristics. The back-side thinning process demonstrates superior performance compared to front-side etching, reducing the insertion loss of 90° bends from 1.80 dB to 0.71 dB. Further optimization using silver reflection layers achieves an insertion loss of 0.57 dB. The optimized structure shows excellent performance in the blue-green spectral range (420–500 nm) with insertion losses below 0.9 dB, providing practical solutions for compact GaN photonic integrated chips in visible light communications.https://www.mdpi.com/2079-4991/15/3/151GaN waveguidebent waveguideinsertion lossback-side thinningvisible light communicationphotonic integrated chips
spellingShingle Wendi Li
Huiping Yin
Qian Fang
Feifei Qin
Zheng Shi
Yongjin Wang
Xin Li
Optimization of GaN Bent Waveguides in the Visible Spectrum for Reduced Insertion Loss
Nanomaterials
GaN waveguide
bent waveguide
insertion loss
back-side thinning
visible light communication
photonic integrated chips
title Optimization of GaN Bent Waveguides in the Visible Spectrum for Reduced Insertion Loss
title_full Optimization of GaN Bent Waveguides in the Visible Spectrum for Reduced Insertion Loss
title_fullStr Optimization of GaN Bent Waveguides in the Visible Spectrum for Reduced Insertion Loss
title_full_unstemmed Optimization of GaN Bent Waveguides in the Visible Spectrum for Reduced Insertion Loss
title_short Optimization of GaN Bent Waveguides in the Visible Spectrum for Reduced Insertion Loss
title_sort optimization of gan bent waveguides in the visible spectrum for reduced insertion loss
topic GaN waveguide
bent waveguide
insertion loss
back-side thinning
visible light communication
photonic integrated chips
url https://www.mdpi.com/2079-4991/15/3/151
work_keys_str_mv AT wendili optimizationofganbentwaveguidesinthevisiblespectrumforreducedinsertionloss
AT huipingyin optimizationofganbentwaveguidesinthevisiblespectrumforreducedinsertionloss
AT qianfang optimizationofganbentwaveguidesinthevisiblespectrumforreducedinsertionloss
AT feifeiqin optimizationofganbentwaveguidesinthevisiblespectrumforreducedinsertionloss
AT zhengshi optimizationofganbentwaveguidesinthevisiblespectrumforreducedinsertionloss
AT yongjinwang optimizationofganbentwaveguidesinthevisiblespectrumforreducedinsertionloss
AT xinli optimizationofganbentwaveguidesinthevisiblespectrumforreducedinsertionloss