Characteristics of MOCVD-Grown High-Quality CdTe Layers on GaAs Substrates
CdTe epitaxial layers are grown successfully on a (100)-GaAs substrate by metalorganic chemical vapor deposition (MOCVD) using dimethylcadrnium (DMCd) and diethyltelluride (DETe) as alkyl sources. The CdTe epilayers grown between 365°C and 380°C possess the best surface morphology. DETe is used as t...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1995-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1995/16596 |
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| Summary: | CdTe epitaxial layers are grown successfully on a (100)-GaAs substrate by metalorganic chemical vapor
deposition (MOCVD) using dimethylcadrnium (DMCd) and diethyltelluride (DETe) as alkyl sources.
The CdTe epilayers grown between 365°C and 380°C possess the best surface morphology. DETe is used
as the controlling species of this growth system. Typical growth rates are varied from 2.51µm/hr to
5.31µm/hr. Low-temperature (12K) photoluminscence (PL) measurements reveal that 380°C is the best
growth temperature and the full width at half maximum (FWHM) of the dominated peak is about
1.583eV by the bound-exciton emission of 9.38meV. The double crystal X-ray rocking curves (DCRC)
indicate that the FWHM decreases while increasing the epilayer thickness and approaches a stable value
about 80 arc sec under the growth rate of 5.2µm/hr, the growth temperature of 380°C and the
DETe/DMCd concentration ratio of 1.7. The value of 80 arc sec in FWHM is the smallest one ever
reported to date. |
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| ISSN: | 0882-7516 1563-5031 |