Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel

Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel

The continuous scaling down of MOSFETs is one of the present trends in semiconductor devices to increase device performance. Nevertheless, with scaling down beyond 22 nm technology, the performance of even the newer nanodevices with multi-gate architecture declines with an increase in short channel...

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Bibliographic Details
Main Authors: Potaraju Yugender, Rudra Sankar Dhar, Swagat Nanda, Kuleen Kumar, Pandurengan Sakthivel, Arun Thirumurugan
Format: Article
Language:English
Published: MDPI AG 2024-11-01
Series:Micromachines
Subjects:
GAAFET
heterostructure-on-insulator
on current
stacked high-K
strained silicon
Online Access:https://www.mdpi.com/2072-666X/15/12/1455
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