APA (7th ed.) Citation

Yugender, P., Dhar, R. S., Nanda, S., Kumar, K., Sakthivel, P., & Thirumurugan, A. Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel. MDPI AG.

Chicago Style (17th ed.) Citation

Yugender, Potaraju, Rudra Sankar Dhar, Swagat Nanda, Kuleen Kumar, Pandurengan Sakthivel, and Arun Thirumurugan. Enhanced Drive Current in 10 Nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel. MDPI AG.

MLA (9th ed.) Citation

Yugender, Potaraju, et al. Enhanced Drive Current in 10 Nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel. MDPI AG.