Output Characteristics of a GaAs Photoconductive Semiconductor Switch With Comb Electrodes
GaAs photoconductive semiconductor switches (PCSSs) with comb electrodes were fabricated on semi-insulating GaAs. A pulsed 1064-nm laser with a 700-ps (FWHM) pulse width and optical energy of <inline-formula> <tex-math notation="LaTeX">$134 \; \mu $ </tex-math></inline...
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IEEE
2024-01-01
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| author | Yong Pyo Kim Pyeung Hwi Choi Jongbae Kang Sung-Min Hong Sungbae Lee Jae-Hyung Jang |
| author_facet | Yong Pyo Kim Pyeung Hwi Choi Jongbae Kang Sung-Min Hong Sungbae Lee Jae-Hyung Jang |
| author_sort | Yong Pyo Kim |
| collection | DOAJ |
| description | GaAs photoconductive semiconductor switches (PCSSs) with comb electrodes were fabricated on semi-insulating GaAs. A pulsed 1064-nm laser with a 700-ps (FWHM) pulse width and optical energy of <inline-formula> <tex-math notation="LaTeX">$134 \; \mu $ </tex-math></inline-formula>J was used to trigger 2-mm-gap PCSSs with comb lengths ranging from 0 to <inline-formula> <tex-math notation="LaTeX">$750 \; \mu $ </tex-math></inline-formula>m. The effect of the comb electrodes on the output characteristics was investigated by comparing the performance parameters of sample devices with different comb lengths. Devices with a longer comb exhibited higher peak output voltage and better immunity against surface flashover. A PCSS specimen with a 750-<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m comb exhibited a higher peak output voltage by 3.53 times compared to a PCSS without a comb at bias voltages lower than 1 kV. Moreover, the PCSS with the 750-<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m comb electrode successfully generated a pulse with a peak voltage of 1.34 kV, while the peak voltage generated by a PCSS without a comb was limited to 0.74 kV. |
| format | Article |
| id | doaj-art-59bbdde18bc541d3b64708a9712c90c6 |
| institution | OA Journals |
| issn | 2169-3536 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
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| spelling | doaj-art-59bbdde18bc541d3b64708a9712c90c62025-08-20T02:19:54ZengIEEEIEEE Access2169-35362024-01-011217711917712210.1109/ACCESS.2024.349714410752635Output Characteristics of a GaAs Photoconductive Semiconductor Switch With Comb ElectrodesYong Pyo Kim0Pyeung Hwi Choi1https://orcid.org/0000-0002-4442-9250Jongbae Kang2https://orcid.org/0009-0005-7767-6476Sung-Min Hong3https://orcid.org/0000-0002-1840-085XSungbae Lee4https://orcid.org/0000-0002-0254-9473Jae-Hyung Jang5https://orcid.org/0000-0001-9633-5574School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju, Republic of KoreaSchool of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju, Republic of KoreaDepartment of Energy Engineering, Korea Institute of Energy Technology (KENTECH), Naju-si, Republic of KoreaSchool of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju, Republic of KoreaDepartment of Energy Engineering, Korea Institute of Energy Technology (KENTECH), Naju-si, Republic of KoreaDepartment of Energy Engineering, Korea Institute of Energy Technology (KENTECH), Naju-si, Republic of KoreaGaAs photoconductive semiconductor switches (PCSSs) with comb electrodes were fabricated on semi-insulating GaAs. A pulsed 1064-nm laser with a 700-ps (FWHM) pulse width and optical energy of <inline-formula> <tex-math notation="LaTeX">$134 \; \mu $ </tex-math></inline-formula>J was used to trigger 2-mm-gap PCSSs with comb lengths ranging from 0 to <inline-formula> <tex-math notation="LaTeX">$750 \; \mu $ </tex-math></inline-formula>m. The effect of the comb electrodes on the output characteristics was investigated by comparing the performance parameters of sample devices with different comb lengths. Devices with a longer comb exhibited higher peak output voltage and better immunity against surface flashover. A PCSS specimen with a 750-<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m comb exhibited a higher peak output voltage by 3.53 times compared to a PCSS without a comb at bias voltages lower than 1 kV. Moreover, the PCSS with the 750-<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m comb electrode successfully generated a pulse with a peak voltage of 1.34 kV, while the peak voltage generated by a PCSS without a comb was limited to 0.74 kV.https://ieeexplore.ieee.org/document/10752635/Gallium arsenide (GaAs)photoconductive semiconductor switch (PCSS) |
| spellingShingle | Yong Pyo Kim Pyeung Hwi Choi Jongbae Kang Sung-Min Hong Sungbae Lee Jae-Hyung Jang Output Characteristics of a GaAs Photoconductive Semiconductor Switch With Comb Electrodes IEEE Access Gallium arsenide (GaAs) photoconductive semiconductor switch (PCSS) |
| title | Output Characteristics of a GaAs Photoconductive Semiconductor Switch With Comb Electrodes |
| title_full | Output Characteristics of a GaAs Photoconductive Semiconductor Switch With Comb Electrodes |
| title_fullStr | Output Characteristics of a GaAs Photoconductive Semiconductor Switch With Comb Electrodes |
| title_full_unstemmed | Output Characteristics of a GaAs Photoconductive Semiconductor Switch With Comb Electrodes |
| title_short | Output Characteristics of a GaAs Photoconductive Semiconductor Switch With Comb Electrodes |
| title_sort | output characteristics of a gaas photoconductive semiconductor switch with comb electrodes |
| topic | Gallium arsenide (GaAs) photoconductive semiconductor switch (PCSS) |
| url | https://ieeexplore.ieee.org/document/10752635/ |
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