Charge properties and currents in the silicon/nanoparticles of zinc oxide heterostructure irradiated by the solar light

Silicon/zinc oxide heterostructures have shown themselves to be promising for use in photovoltaics. This paper presents the results of modeling the charge properties and currents in a Si/nanosized ZnO particle with different types of conductivity under sunlight irradiation. The simulation was carrie...

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Main Authors: A. A. Kuraptsova, A. L. Danilyuk
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2022-01-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
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Online Access:https://doklady.bsuir.by/jour/article/view/3237
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author A. A. Kuraptsova
A. L. Danilyuk
author_facet A. A. Kuraptsova
A. L. Danilyuk
author_sort A. A. Kuraptsova
collection DOAJ
description Silicon/zinc oxide heterostructures have shown themselves to be promising for use in photovoltaics. This paper presents the results of modeling the charge properties and currents in a Si/nanosized ZnO particle with different types of conductivity under sunlight irradiation. The simulation was carried out using the Comsol Multiphysics software package. The energy diagrams of the investigated heterostructures were plotted, the charge properties and currents flowing in the structure were investigated, the dependences of the rate of generation of charge carriers on wavelength on the surfaces of silicon, zinc oxide, and at the interface between silicon and zinc oxide, the rate of recombination of charge carriers at various wavelengths of incident radiation was obtained. The regularities of the influence of wavelength of the incident radiation on the charge density and electric potential on the surface of heterostructures have been established. It is shown that the potential on the surface of the p-Si / n-ZnO heterostructure is positive, depends on the wavelength of the incident radiation and reaches the maximum of 0.68 V. For other structures, it is negative and does not depend on the wavelength: n-Si / p-ZnO –0.78 V, p-Si / p-ZnO –0.65 V, n-Si / n-ZnO –0.25 V.
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id doaj-art-598de69ecb6a41a3bb1dafa1910236b0
institution Kabale University
issn 1729-7648
language Russian
publishDate 2022-01-01
publisher Educational institution «Belarusian State University of Informatics and Radioelectronics»
record_format Article
series Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
spelling doaj-art-598de69ecb6a41a3bb1dafa1910236b02025-08-20T04:00:41ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482022-01-01198101410.35596/1729-7648-2021-19-8-10-141755Charge properties and currents in the silicon/nanoparticles of zinc oxide heterostructure irradiated by the solar lightA. A. Kuraptsova0A. L. Danilyuk1Belarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsSilicon/zinc oxide heterostructures have shown themselves to be promising for use in photovoltaics. This paper presents the results of modeling the charge properties and currents in a Si/nanosized ZnO particle with different types of conductivity under sunlight irradiation. The simulation was carried out using the Comsol Multiphysics software package. The energy diagrams of the investigated heterostructures were plotted, the charge properties and currents flowing in the structure were investigated, the dependences of the rate of generation of charge carriers on wavelength on the surfaces of silicon, zinc oxide, and at the interface between silicon and zinc oxide, the rate of recombination of charge carriers at various wavelengths of incident radiation was obtained. The regularities of the influence of wavelength of the incident radiation on the charge density and electric potential on the surface of heterostructures have been established. It is shown that the potential on the surface of the p-Si / n-ZnO heterostructure is positive, depends on the wavelength of the incident radiation and reaches the maximum of 0.68 V. For other structures, it is negative and does not depend on the wavelength: n-Si / p-ZnO –0.78 V, p-Si / p-ZnO –0.65 V, n-Si / n-ZnO –0.25 V.https://doklady.bsuir.by/jour/article/view/3237nanoparticlezinc oxidesiliconheterostructurecharge propertiesmodelingphotovoltaics
spellingShingle A. A. Kuraptsova
A. L. Danilyuk
Charge properties and currents in the silicon/nanoparticles of zinc oxide heterostructure irradiated by the solar light
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
nanoparticle
zinc oxide
silicon
heterostructure
charge properties
modeling
photovoltaics
title Charge properties and currents in the silicon/nanoparticles of zinc oxide heterostructure irradiated by the solar light
title_full Charge properties and currents in the silicon/nanoparticles of zinc oxide heterostructure irradiated by the solar light
title_fullStr Charge properties and currents in the silicon/nanoparticles of zinc oxide heterostructure irradiated by the solar light
title_full_unstemmed Charge properties and currents in the silicon/nanoparticles of zinc oxide heterostructure irradiated by the solar light
title_short Charge properties and currents in the silicon/nanoparticles of zinc oxide heterostructure irradiated by the solar light
title_sort charge properties and currents in the silicon nanoparticles of zinc oxide heterostructure irradiated by the solar light
topic nanoparticle
zinc oxide
silicon
heterostructure
charge properties
modeling
photovoltaics
url https://doklady.bsuir.by/jour/article/view/3237
work_keys_str_mv AT aakuraptsova chargepropertiesandcurrentsinthesiliconnanoparticlesofzincoxideheterostructureirradiatedbythesolarlight
AT aldanilyuk chargepropertiesandcurrentsinthesiliconnanoparticlesofzincoxideheterostructureirradiatedbythesolarlight