Defects modification in thermoelectric Mg2Sn (Ge) epitaxial thin films through modulation of Mg flux rate in MBE
Precise defect control is crucial for optimizing thermoelectric (TE) materials. However, thin film processes differ from bulk synthesis, necessitating distinct approaches to defect management. This study investigates the impact of varying Mg flux rates in the molecular beam epitaxy (MBE) growth of e...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | JPhys Energy |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2515-7655/adc489 |
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