Solution-based manufacturing of 2D materials for memristive device applications
Two-dimensional (2D) materials have attracted significant attention as resistive switching materials for two-terminal non-volatile memory devices, often referred to as memristors, due to their potential for achieving fast switching speeds and low power consumption. Their excellent gate tunability in...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | International Journal of Extreme Manufacturing |
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| Online Access: | https://doi.org/10.1088/2631-7990/add634 |
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| author | Kijeong Nam Gwang Ya Kim Dongjoon Rhee Hyesung Park Deep Jariwala Joohoon Kang |
| author_facet | Kijeong Nam Gwang Ya Kim Dongjoon Rhee Hyesung Park Deep Jariwala Joohoon Kang |
| author_sort | Kijeong Nam |
| collection | DOAJ |
| description | Two-dimensional (2D) materials have attracted significant attention as resistive switching materials for two-terminal non-volatile memory devices, often referred to as memristors, due to their potential for achieving fast switching speeds and low power consumption. Their excellent gate tunability in electronic properties also enables hybrid devices combining the functionality of memory devices and transistors, with the possibility of realizing large-scale memristive crossbar arrays with high integration density. To facilitate the use of 2D materials in practical memristor applications, scalable synthesis of 2D materials with high electronic quality is critical. In addition, low-temperature integration for complementary metal oxide semiconductor (CMOS) back-end-of-line (BEOL) integration is important for embedded memory applications. Solution-based exfoliation has been actively explored as a facile, cost-effective method for the mass production and low-temperature integration of 2D materials. However, the films produced from the resulting 2D nanosheet dispersions exhibited poor electrical properties in the early stages of research, thereby hindering their use in electronic devices. Recent progress in the exfoliation process and post-processing has led to significant improvements in the electronic performance of solution-processed 2D materials, driving increased adoption of these materials in memristor research. In this review article, we provide a thorough overview of the progress and current status of memristive devices utilizing solution-processed 2D resistive switching layers. We begin by introducing the electrical characteristics and resistive switching mechanisms of memristors fabricated with conventional materials to lay the groundwork for understanding memristive behavior in 2D materials. Representative solution-based exfoliation and film formation techniques are also introduced, emphasizing the benefits of these approaches for obtaining scalable 2D material films compared to conventional methods such as mechanical exfoliation and chemical vapor deposition. Finally, we explore the electrical characteristics, resistive switching mechanisms, and applications of solution-processed 2D memristive devices, discussing their advantages and remaining challenges. |
| format | Article |
| id | doaj-art-58f2f7703abb4fa3825e2866e5371b2c |
| institution | Kabale University |
| issn | 2631-7990 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | International Journal of Extreme Manufacturing |
| spelling | doaj-art-58f2f7703abb4fa3825e2866e5371b2c2025-08-20T03:53:51ZengIOP PublishingInternational Journal of Extreme Manufacturing2631-79902025-01-017505200110.1088/2631-7990/add634Solution-based manufacturing of 2D materials for memristive device applicationsKijeong Nam0Gwang Ya Kim1Dongjoon Rhee2Hyesung Park3Deep Jariwala4Joohoon Kang5https://orcid.org/0000-0002-6578-2547School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU) , Suwon 16419, Republic of KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU) , Suwon 16419, Republic of KoreaDepartment of Chemical and Biomolecular Engineering, Yonsei University , Seoul 03722, Republic of Korea; Department of Electrical and Systems Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States of AmericaKU-KIST Graduate School of Converging Science and Technology, Korea University , Seoul 02841, Republic of Korea; Department of Integrative Energy Engineering, Korea University , Seoul 02841, Republic of KoreaDepartment of Electrical and Systems Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States of AmericaDepartment of Chemical and Biomolecular Engineering, Yonsei University , Seoul 03722, Republic of KoreaTwo-dimensional (2D) materials have attracted significant attention as resistive switching materials for two-terminal non-volatile memory devices, often referred to as memristors, due to their potential for achieving fast switching speeds and low power consumption. Their excellent gate tunability in electronic properties also enables hybrid devices combining the functionality of memory devices and transistors, with the possibility of realizing large-scale memristive crossbar arrays with high integration density. To facilitate the use of 2D materials in practical memristor applications, scalable synthesis of 2D materials with high electronic quality is critical. In addition, low-temperature integration for complementary metal oxide semiconductor (CMOS) back-end-of-line (BEOL) integration is important for embedded memory applications. Solution-based exfoliation has been actively explored as a facile, cost-effective method for the mass production and low-temperature integration of 2D materials. However, the films produced from the resulting 2D nanosheet dispersions exhibited poor electrical properties in the early stages of research, thereby hindering their use in electronic devices. Recent progress in the exfoliation process and post-processing has led to significant improvements in the electronic performance of solution-processed 2D materials, driving increased adoption of these materials in memristor research. In this review article, we provide a thorough overview of the progress and current status of memristive devices utilizing solution-processed 2D resistive switching layers. We begin by introducing the electrical characteristics and resistive switching mechanisms of memristors fabricated with conventional materials to lay the groundwork for understanding memristive behavior in 2D materials. Representative solution-based exfoliation and film formation techniques are also introduced, emphasizing the benefits of these approaches for obtaining scalable 2D material films compared to conventional methods such as mechanical exfoliation and chemical vapor deposition. Finally, we explore the electrical characteristics, resistive switching mechanisms, and applications of solution-processed 2D memristive devices, discussing their advantages and remaining challenges.https://doi.org/10.1088/2631-7990/add634memristorneuromorphic device2D materialssolution-based manufacturing |
| spellingShingle | Kijeong Nam Gwang Ya Kim Dongjoon Rhee Hyesung Park Deep Jariwala Joohoon Kang Solution-based manufacturing of 2D materials for memristive device applications International Journal of Extreme Manufacturing memristor neuromorphic device 2D materials solution-based manufacturing |
| title | Solution-based manufacturing of 2D materials for memristive device applications |
| title_full | Solution-based manufacturing of 2D materials for memristive device applications |
| title_fullStr | Solution-based manufacturing of 2D materials for memristive device applications |
| title_full_unstemmed | Solution-based manufacturing of 2D materials for memristive device applications |
| title_short | Solution-based manufacturing of 2D materials for memristive device applications |
| title_sort | solution based manufacturing of 2d materials for memristive device applications |
| topic | memristor neuromorphic device 2D materials solution-based manufacturing |
| url | https://doi.org/10.1088/2631-7990/add634 |
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