Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region
The paper presents a novel 8T SRAM cell with access pass gates replaced with modified PMOS pass transistor logic. In comparison to 6T SRAM cell, the proposed cell achieves 3.5x higher read SNM and 2.4x higher write SNM with 16.6% improved SINM (static current noise margin) distribution at the expen...
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | International Journal of Reconfigurable Computing |
| Online Access: | http://dx.doi.org/10.1155/2015/749816 |
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| _version_ | 1832551802411679744 |
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| author | Priya Gupta Anu Gupta Abhijit Asati |
| author_facet | Priya Gupta Anu Gupta Abhijit Asati |
| author_sort | Priya Gupta |
| collection | DOAJ |
| description | The paper presents a novel 8T SRAM cell with access pass gates replaced with modified PMOS pass transistor logic. In comparison to 6T SRAM cell, the proposed cell achieves 3.5x higher read SNM and 2.4x higher write SNM with 16.6% improved SINM (static current noise margin) distribution at the expense of 7x lower WTI (write trip current) at 0.4 V power supply voltage, while maintaining similar stability in hold mode. The proposed 8T SRAM cell shows improvements in terms of 7.735x narrower spread in average standby power, 2.61x less in average TWA (write access time), and 1.07x less in average TRA (read access time) at supply voltage varying from 0.3 V to 0.5 V as compared to 6T SRAM equivalent at 45 nm technology node. Thus, comparative analysis shows that the proposed design has a significant improvement, thereby achieving high cell stability at 45 nm technology node. |
| format | Article |
| id | doaj-art-58c29a46ed3f45b4bd09b6ddfdca5234 |
| institution | Kabale University |
| issn | 1687-7195 1687-7209 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Reconfigurable Computing |
| spelling | doaj-art-58c29a46ed3f45b4bd09b6ddfdca52342025-02-03T06:00:31ZengWileyInternational Journal of Reconfigurable Computing1687-71951687-72092015-01-01201510.1155/2015/749816749816Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold RegionPriya Gupta0Anu Gupta1Abhijit Asati2Department of Electrical and Electronics Engineering, BITS, Pilani, Rajasthan 333031, IndiaDepartment of Electrical and Electronics Engineering, BITS, Pilani, Rajasthan 333031, IndiaDepartment of Electrical and Electronics Engineering, BITS, Pilani, Rajasthan 333031, IndiaThe paper presents a novel 8T SRAM cell with access pass gates replaced with modified PMOS pass transistor logic. In comparison to 6T SRAM cell, the proposed cell achieves 3.5x higher read SNM and 2.4x higher write SNM with 16.6% improved SINM (static current noise margin) distribution at the expense of 7x lower WTI (write trip current) at 0.4 V power supply voltage, while maintaining similar stability in hold mode. The proposed 8T SRAM cell shows improvements in terms of 7.735x narrower spread in average standby power, 2.61x less in average TWA (write access time), and 1.07x less in average TRA (read access time) at supply voltage varying from 0.3 V to 0.5 V as compared to 6T SRAM equivalent at 45 nm technology node. Thus, comparative analysis shows that the proposed design has a significant improvement, thereby achieving high cell stability at 45 nm technology node.http://dx.doi.org/10.1155/2015/749816 |
| spellingShingle | Priya Gupta Anu Gupta Abhijit Asati Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region International Journal of Reconfigurable Computing |
| title | Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region |
| title_full | Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region |
| title_fullStr | Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region |
| title_full_unstemmed | Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region |
| title_short | Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region |
| title_sort | leakage immune modified pass transistor based 8t sram cell in subthreshold region |
| url | http://dx.doi.org/10.1155/2015/749816 |
| work_keys_str_mv | AT priyagupta leakageimmunemodifiedpasstransistorbased8tsramcellinsubthresholdregion AT anugupta leakageimmunemodifiedpasstransistorbased8tsramcellinsubthresholdregion AT abhijitasati leakageimmunemodifiedpasstransistorbased8tsramcellinsubthresholdregion |