Localization – Weak Antilocalization Crossover in Two-Dimensional Materials with Spin-Orbit Interaction
In this paper, the patterns of manifestation of weak localization and antilocalization in graphene with enhanced spin-orbit interaction, as well as in a topological insulator with a gap in surface states induced by magnetic impurities are studied. The parameters characterizing the manifestation of w...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2023-10-01
|
| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/3719 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849240594498453504 |
|---|---|
| author | U. A. Zaitsau D. A. Podryabinkin V. V. Melnikova A. L. Danilyuk S. L. Prischepa |
| author_facet | U. A. Zaitsau D. A. Podryabinkin V. V. Melnikova A. L. Danilyuk S. L. Prischepa |
| author_sort | U. A. Zaitsau |
| collection | DOAJ |
| description | In this paper, the patterns of manifestation of weak localization and antilocalization in graphene with enhanced spin-orbit interaction, as well as in a topological insulator with a gap in surface states induced by magnetic impurities are studied. The parameters characterizing the manifestation of weak localization, antilocalization and crossover between them are established. Quantum corrections to the conductivity of graphene are determined in units of e2/h = 38.64 μS for various ratios between the characteristic dephasing time and spin-orbit scattering time. It has been established that with a relatively long spin-orbit scattering time, not less than 10–10 s, it does not affect the correction to conductivity and its value is determined by the dephasing time and the times of intervalley and intravalley scattering. The effect of the spin-orbit scattering is to suppress weak antilocalization. It leads to a spin flip of the conduction electron during elastic scattering, and the interference pattern of weak localization becomes more complicated due to the mixing of spin states. The sign of the quantum correction depends on which spin state contributes the most. |
| format | Article |
| id | doaj-art-587fa8ff09c440889963803fbd70d508 |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2023-10-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-587fa8ff09c440889963803fbd70d5082025-08-20T04:00:33ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482023-10-01215202410.35596/1729-7648-2023-21-5-20-241932Localization – Weak Antilocalization Crossover in Two-Dimensional Materials with Spin-Orbit InteractionU. A. Zaitsau0D. A. Podryabinkin1V. V. Melnikova2A. L. Danilyuk3S. L. Prischepa4Belarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsIn this paper, the patterns of manifestation of weak localization and antilocalization in graphene with enhanced spin-orbit interaction, as well as in a topological insulator with a gap in surface states induced by magnetic impurities are studied. The parameters characterizing the manifestation of weak localization, antilocalization and crossover between them are established. Quantum corrections to the conductivity of graphene are determined in units of e2/h = 38.64 μS for various ratios between the characteristic dephasing time and spin-orbit scattering time. It has been established that with a relatively long spin-orbit scattering time, not less than 10–10 s, it does not affect the correction to conductivity and its value is determined by the dephasing time and the times of intervalley and intravalley scattering. The effect of the spin-orbit scattering is to suppress weak antilocalization. It leads to a spin flip of the conduction electron during elastic scattering, and the interference pattern of weak localization becomes more complicated due to the mixing of spin states. The sign of the quantum correction depends on which spin state contributes the most.https://doklady.bsuir.by/jour/article/view/3719graphenetransition metal dichalcogenidestopological insulatorsweak localizationantilocalizationmagnetoresistancespin-orbit interactionberry phase |
| spellingShingle | U. A. Zaitsau D. A. Podryabinkin V. V. Melnikova A. L. Danilyuk S. L. Prischepa Localization – Weak Antilocalization Crossover in Two-Dimensional Materials with Spin-Orbit Interaction Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki graphene transition metal dichalcogenides topological insulators weak localization antilocalization magnetoresistance spin-orbit interaction berry phase |
| title | Localization – Weak Antilocalization Crossover in Two-Dimensional Materials with Spin-Orbit Interaction |
| title_full | Localization – Weak Antilocalization Crossover in Two-Dimensional Materials with Spin-Orbit Interaction |
| title_fullStr | Localization – Weak Antilocalization Crossover in Two-Dimensional Materials with Spin-Orbit Interaction |
| title_full_unstemmed | Localization – Weak Antilocalization Crossover in Two-Dimensional Materials with Spin-Orbit Interaction |
| title_short | Localization – Weak Antilocalization Crossover in Two-Dimensional Materials with Spin-Orbit Interaction |
| title_sort | localization weak antilocalization crossover in two dimensional materials with spin orbit interaction |
| topic | graphene transition metal dichalcogenides topological insulators weak localization antilocalization magnetoresistance spin-orbit interaction berry phase |
| url | https://doklady.bsuir.by/jour/article/view/3719 |
| work_keys_str_mv | AT uazaitsau localizationweakantilocalizationcrossoverintwodimensionalmaterialswithspinorbitinteraction AT dapodryabinkin localizationweakantilocalizationcrossoverintwodimensionalmaterialswithspinorbitinteraction AT vvmelnikova localizationweakantilocalizationcrossoverintwodimensionalmaterialswithspinorbitinteraction AT aldanilyuk localizationweakantilocalizationcrossoverintwodimensionalmaterialswithspinorbitinteraction AT slprischepa localizationweakantilocalizationcrossoverintwodimensionalmaterialswithspinorbitinteraction |