Integration of Emission-wavelength-controlled InAs Quantum Dots for Ultrabroadband Near-infrared Light Source
Near-infrared (NIR) light sources are widely utilized in biological and medical imaging systems owing to their long penetration depth in living tissues. In a recently developed biomedical non-invasive cross-sectional imaging system, called optical coherence tomography (OCT), a broadband spectrum is...
Saved in:
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-09-01
|
| Series: | Nanomaterials and Nanotechnology |
| Subjects: | |
| Online Access: | http://www.intechopen.com/journals/nanomaterials_and_nanotechnology/integration-of-emission-wavelengthcontrolled-inas-quantum-dots-for-ultrabroadband-near-infrared-ligh |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Near-infrared (NIR) light sources are widely
utilized in biological and medical imaging systems owing to
their long penetration depth in living tissues. In a recently
developed biomedical non-invasive cross-sectional imaging
system, called optical coherence tomography (OCT), a
broadband spectrum is also required, because OCT is based
on low coherence interferometry. To meet these operational
requirements, we have developed a NIR broadband light
source by integrating self-assembled InAs quantum dots
(QDs) grown on a GaAs substrate (InAs/GaAs QDs) with
different emission wavelengths. In this review, we introduce
the developed light sources and QD growth techniques that
are used to control the emission wavelength for broadband
emission spectra with center wavelengths of 1.05 and 1.3 μm.
Although the strain-induced Stranski-Krastanov (S-K)
mode-grown InAs/GaAs QDs normally emit light at a
wavelength of around 1.2 μm, the central emission
wavelength can be controlled to be between 0.9–1.4 μm by
the use of an In-flush technique, the insertion of a strainreducing
layer (SRL) and bi-layer QD growth techniques.
These techniques are useful for applying InAs/GaAs QDs as
NIR broadband light sources and are especially suitable for
our proposed spectral-shape-controllable broadband NIR
light source. The potential of this light source for
improving the performance of OCT systems is discussed. |
|---|---|
| ISSN: | 1847-9804 |