Optimization of the Cathode Arc Plasma Deposition Processing Parameters of ZnO Film Using the Grey-Relational Taguchi Method
We deposited undoped ZnO films on the glass substrate at a low temperature (<70°C) using cathode arc plasma deposition (CAPD) and the grey-relational Taguchi method was used to determine the processing parameters of ZnO thin films. The Taguchi method with an L9 orthogonal array, signal-to-noise (...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/187416 |
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| author | Shuo-Fu Hsu Jyh-Horng Chou Chun-Hsiung Fang Min-Hang Weng |
| author_facet | Shuo-Fu Hsu Jyh-Horng Chou Chun-Hsiung Fang Min-Hang Weng |
| author_sort | Shuo-Fu Hsu |
| collection | DOAJ |
| description | We deposited undoped ZnO films on the glass substrate at a low temperature (<70°C) using cathode arc plasma deposition (CAPD) and the grey-relational Taguchi method was used to determine the processing parameters of ZnO thin films. The Taguchi method with an L9 orthogonal array, signal-to-noise (S/N) ratio, and analysis of variance (ANOVA) is employed to investigate the performances in the deposition operations. The effect and optimization of deposition parameters, comprising the Ar : O2 gas flow ratio of 1 : 6, 1 : 8, and 1 : 10, the arc current of 50 A, 60 A, and 70 A, and the deposition time of 5 min, 10 min, and 15 min, on the electrical resistivity and optical transmittance of the ZnO films are studied. The results indicate that, by using the grey-relational Taguchi method, the optical transmittance of ZnO thin films increases from 88.17% to 88.82% and the electrical resistivity decreases from 5.12×10-3Ω-cm to 4.38×10-3Ω-cm, respectively. |
| format | Article |
| id | doaj-art-58463deb68944ba291155e788fb152bb |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-58463deb68944ba291155e788fb152bb2025-02-03T01:10:59ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422014-01-01201410.1155/2014/187416187416Optimization of the Cathode Arc Plasma Deposition Processing Parameters of ZnO Film Using the Grey-Relational Taguchi MethodShuo-Fu Hsu0Jyh-Horng Chou1Chun-Hsiung Fang2Min-Hang Weng3Department of Electrical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, TaiwanDepartment of Electrical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, TaiwanDepartment of Electrical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, TaiwanMedical Devices and Opto-Electronics Equipment Department, Metal Industry Research and Development Center, Kaohsiung 821, TaiwanWe deposited undoped ZnO films on the glass substrate at a low temperature (<70°C) using cathode arc plasma deposition (CAPD) and the grey-relational Taguchi method was used to determine the processing parameters of ZnO thin films. The Taguchi method with an L9 orthogonal array, signal-to-noise (S/N) ratio, and analysis of variance (ANOVA) is employed to investigate the performances in the deposition operations. The effect and optimization of deposition parameters, comprising the Ar : O2 gas flow ratio of 1 : 6, 1 : 8, and 1 : 10, the arc current of 50 A, 60 A, and 70 A, and the deposition time of 5 min, 10 min, and 15 min, on the electrical resistivity and optical transmittance of the ZnO films are studied. The results indicate that, by using the grey-relational Taguchi method, the optical transmittance of ZnO thin films increases from 88.17% to 88.82% and the electrical resistivity decreases from 5.12×10-3Ω-cm to 4.38×10-3Ω-cm, respectively.http://dx.doi.org/10.1155/2014/187416 |
| spellingShingle | Shuo-Fu Hsu Jyh-Horng Chou Chun-Hsiung Fang Min-Hang Weng Optimization of the Cathode Arc Plasma Deposition Processing Parameters of ZnO Film Using the Grey-Relational Taguchi Method Advances in Materials Science and Engineering |
| title | Optimization of the Cathode Arc Plasma Deposition Processing Parameters of ZnO Film Using the Grey-Relational Taguchi Method |
| title_full | Optimization of the Cathode Arc Plasma Deposition Processing Parameters of ZnO Film Using the Grey-Relational Taguchi Method |
| title_fullStr | Optimization of the Cathode Arc Plasma Deposition Processing Parameters of ZnO Film Using the Grey-Relational Taguchi Method |
| title_full_unstemmed | Optimization of the Cathode Arc Plasma Deposition Processing Parameters of ZnO Film Using the Grey-Relational Taguchi Method |
| title_short | Optimization of the Cathode Arc Plasma Deposition Processing Parameters of ZnO Film Using the Grey-Relational Taguchi Method |
| title_sort | optimization of the cathode arc plasma deposition processing parameters of zno film using the grey relational taguchi method |
| url | http://dx.doi.org/10.1155/2014/187416 |
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