Effects of processing parameters on the reversible phase transition of germanium telluride
The tunable and reversible manufacturing function of stealth metamaterials is of great practical significance to adapt to complex electromagnetic environment. However, the low fault tolerance of existing manufacturing methods limits their further development and utilization. In this article, the mic...
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Elsevier
2024-11-01
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| Series: | Journal of Materials Research and Technology |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785424022543 |
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| author | Haoran Ma Shaorui Yang Yi Liu Yaguang Ye Le Liu Lei Liu Wei Xiong Leimin Deng Tianting Chen |
| author_facet | Haoran Ma Shaorui Yang Yi Liu Yaguang Ye Le Liu Lei Liu Wei Xiong Leimin Deng Tianting Chen |
| author_sort | Haoran Ma |
| collection | DOAJ |
| description | The tunable and reversible manufacturing function of stealth metamaterials is of great practical significance to adapt to complex electromagnetic environment. However, the low fault tolerance of existing manufacturing methods limits their further development and utilization. In this article, the microstructure evolution and phase transition mechanism of germanium telluride (GeTe) film under different deposition conditions, laser modes, and scanning parameters were investigated. The experimental results show that sputtering pressure and laser pulse width have important effects on the deposition and modulation of GeTe. There are sputtering pressure threshold (SPT) and pulse width threshold (PWT), which determine the crystallization evolution mode and phase transition performance of GeTe film, respectively. For each sputtering pressure and laser pulse width, there are optimal sputtering power and repetition induction times to achieve the best film deposition quality and reverse phase transition function. Finally, the rewritable broadband lossy absorber (RBLA) is fabricated based on laser induction research, which can achieve low reflection stealth function in the range of 8.4–15.7 GHz. After repeated induction, the performance of RBLA remains the same, which is consistent with simulation results. The process and mechanism of GeTe in the fabrication and modulation stage are systematically analyzed and discussed for the first time, which provides a new solution and good candidate for the fabrication and modulation of stealth materials. |
| format | Article |
| id | doaj-art-5842435eab324a5ea82bb59e59245abd |
| institution | DOAJ |
| issn | 2238-7854 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materials Research and Technology |
| spelling | doaj-art-5842435eab324a5ea82bb59e59245abd2025-08-20T02:39:15ZengElsevierJournal of Materials Research and Technology2238-78542024-11-01332661267110.1016/j.jmrt.2024.09.249Effects of processing parameters on the reversible phase transition of germanium tellurideHaoran Ma0Shaorui Yang1Yi Liu2Yaguang Ye3Le Liu4Lei Liu5Wei Xiong6Leimin Deng7Tianting Chen8Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, ChinaWuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, ChinaWuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, ChinaWuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, ChinaWuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, ChinaCollege of Mechanical and Electrical Engineering, Central South University, Changsha, 410083, ChinaWuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, ChinaWuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China; Corresponding author.Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China; Corresponding author.The tunable and reversible manufacturing function of stealth metamaterials is of great practical significance to adapt to complex electromagnetic environment. However, the low fault tolerance of existing manufacturing methods limits their further development and utilization. In this article, the microstructure evolution and phase transition mechanism of germanium telluride (GeTe) film under different deposition conditions, laser modes, and scanning parameters were investigated. The experimental results show that sputtering pressure and laser pulse width have important effects on the deposition and modulation of GeTe. There are sputtering pressure threshold (SPT) and pulse width threshold (PWT), which determine the crystallization evolution mode and phase transition performance of GeTe film, respectively. For each sputtering pressure and laser pulse width, there are optimal sputtering power and repetition induction times to achieve the best film deposition quality and reverse phase transition function. Finally, the rewritable broadband lossy absorber (RBLA) is fabricated based on laser induction research, which can achieve low reflection stealth function in the range of 8.4–15.7 GHz. After repeated induction, the performance of RBLA remains the same, which is consistent with simulation results. The process and mechanism of GeTe in the fabrication and modulation stage are systematically analyzed and discussed for the first time, which provides a new solution and good candidate for the fabrication and modulation of stealth materials.http://www.sciencedirect.com/science/article/pii/S2238785424022543Laser inductionGermanium tellurideThreshold effectRewritable metamaterial |
| spellingShingle | Haoran Ma Shaorui Yang Yi Liu Yaguang Ye Le Liu Lei Liu Wei Xiong Leimin Deng Tianting Chen Effects of processing parameters on the reversible phase transition of germanium telluride Journal of Materials Research and Technology Laser induction Germanium telluride Threshold effect Rewritable metamaterial |
| title | Effects of processing parameters on the reversible phase transition of germanium telluride |
| title_full | Effects of processing parameters on the reversible phase transition of germanium telluride |
| title_fullStr | Effects of processing parameters on the reversible phase transition of germanium telluride |
| title_full_unstemmed | Effects of processing parameters on the reversible phase transition of germanium telluride |
| title_short | Effects of processing parameters on the reversible phase transition of germanium telluride |
| title_sort | effects of processing parameters on the reversible phase transition of germanium telluride |
| topic | Laser induction Germanium telluride Threshold effect Rewritable metamaterial |
| url | http://www.sciencedirect.com/science/article/pii/S2238785424022543 |
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