Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar Cells

Nanostructures have been widely used in solar cells due to their extraordinary photon management properties. However, due to poor pn junction quality and high surface recombination velocity, typical nanostructured solar cells are not efficient compared with the traditional commercial solar cells. He...

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Main Authors: Yusi Chen, Yangsen Kang, Jieyang Jia, Yijie Huo, Muyu Xue, Zheng Lyu, Dong Liang, Li Zhao, James S. Harris
Format: Article
Language:English
Published: Wiley 2017-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2017/7153640
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author Yusi Chen
Yangsen Kang
Jieyang Jia
Yijie Huo
Muyu Xue
Zheng Lyu
Dong Liang
Li Zhao
James S. Harris
author_facet Yusi Chen
Yangsen Kang
Jieyang Jia
Yijie Huo
Muyu Xue
Zheng Lyu
Dong Liang
Li Zhao
James S. Harris
author_sort Yusi Chen
collection DOAJ
description Nanostructures have been widely used in solar cells due to their extraordinary photon management properties. However, due to poor pn junction quality and high surface recombination velocity, typical nanostructured solar cells are not efficient compared with the traditional commercial solar cells. Here, we demonstrate a new approach to design, simulate, and fabricate whole-wafer nanostructures on dielectric layer on thin c-Si for solar cell light trapping. The optical simulation results show that the periodic nanostructure arrays on dielectric materials could suppress the reflection loss over a wide spectral range. In addition, by applying the nanostructured dielectric layer on 40 μm thin c-Si, the reflection loss is suppressed to below 5% over a wide spectra and angular range. Moreover, a c-Si solar cell with 2.9 μm ultrathin absorber layer demonstrates 32% improvement in short circuit current and 44% relative improvement in energy conversion efficiency. Our results suggest that nanostructured dielectric layer has the potential to significantly improve solar cell performance and avoid typical problems of defects and surface recombination for nanostructured solar cells, thus providing a new pathway towards realizing high-efficiency and low-cost c-Si solar cells.
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id doaj-art-57b6d457b7cb4d9c8b9c35252e441eae
institution Kabale University
issn 1110-662X
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language English
publishDate 2017-01-01
publisher Wiley
record_format Article
series International Journal of Photoenergy
spelling doaj-art-57b6d457b7cb4d9c8b9c35252e441eae2025-02-03T06:00:31ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2017-01-01201710.1155/2017/71536407153640Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar CellsYusi Chen0Yangsen Kang1Jieyang Jia2Yijie Huo3Muyu Xue4Zheng Lyu5Dong Liang6Li Zhao7James S. Harris8Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USADepartment of Electrical Engineering, Stanford University, Stanford, CA 94305, USADepartment of Electrical Engineering, Stanford University, Stanford, CA 94305, USADepartment of Electrical Engineering, Stanford University, Stanford, CA 94305, USADepartment of Material Science and Engineering, Stanford University, Stanford, CA 94305, USADepartment of Electrical Engineering, Stanford University, Stanford, CA 94305, USADepartment of Physics, Stanford University, Stanford, CA 94305, USADepartment of Material Science and Engineering, Stanford University, Stanford, CA 94305, USADepartment of Electrical Engineering, Stanford University, Stanford, CA 94305, USANanostructures have been widely used in solar cells due to their extraordinary photon management properties. However, due to poor pn junction quality and high surface recombination velocity, typical nanostructured solar cells are not efficient compared with the traditional commercial solar cells. Here, we demonstrate a new approach to design, simulate, and fabricate whole-wafer nanostructures on dielectric layer on thin c-Si for solar cell light trapping. The optical simulation results show that the periodic nanostructure arrays on dielectric materials could suppress the reflection loss over a wide spectral range. In addition, by applying the nanostructured dielectric layer on 40 μm thin c-Si, the reflection loss is suppressed to below 5% over a wide spectra and angular range. Moreover, a c-Si solar cell with 2.9 μm ultrathin absorber layer demonstrates 32% improvement in short circuit current and 44% relative improvement in energy conversion efficiency. Our results suggest that nanostructured dielectric layer has the potential to significantly improve solar cell performance and avoid typical problems of defects and surface recombination for nanostructured solar cells, thus providing a new pathway towards realizing high-efficiency and low-cost c-Si solar cells.http://dx.doi.org/10.1155/2017/7153640
spellingShingle Yusi Chen
Yangsen Kang
Jieyang Jia
Yijie Huo
Muyu Xue
Zheng Lyu
Dong Liang
Li Zhao
James S. Harris
Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar Cells
International Journal of Photoenergy
title Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar Cells
title_full Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar Cells
title_fullStr Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar Cells
title_full_unstemmed Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar Cells
title_short Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar Cells
title_sort nanostructured dielectric layer for ultrathin crystalline silicon solar cells
url http://dx.doi.org/10.1155/2017/7153640
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