Temperature Dependences of the Electron Energy in AlxGa1 – xAs / GaAs / AlxGa1 – xAs Nanofilms of Different Thickness and Composition of the Barrier Material
Temperature dependences of the energy of electron ground state in AlxGa1 – xAs / GaAs / AlxGa1 – xAs nanofilms of different thickness and concentrations (x) of the barrier material were calculated. Calculations were performed by using the Green functions method, approximation of the effective masses...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2014-11-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2014/4/articles/jnep_2014_V6_04032.pdf |
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| Summary: | Temperature dependences of the energy of electron ground state in AlxGa1 – xAs / GaAs / AlxGa1 – xAs nanofilms of different thickness and concentrations (x) of the barrier material were calculated. Calculations were performed by using the Green functions method, approximation of the effective masses for the electronic system and model of the dielectric continuum – for phonons. The interaction of all branches of the optical phonons: confined in the well material, semi-spaced – in barrier medium and interface has been taken into account. It is shown that the increase in the temperature from 0 to 300 K can cause the increase in the magnitude of long-wave shift of the electron energy about 25-30 % depending on the nanofilm thickness and concentration x. |
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| ISSN: | 2077-6772 |