A 3.584 Tbps coherent receiver chip on InP-LiNbO3 wafer-level integration platform
Abstract The rapid advancement of the thin-film lithium niobate (LiNbO3) platform has established it as a premier choice for high-performance photonics integrated circuits. However, the scalability and cost-efficiency of this platform are hindered by the reliance on chip-level fabrication and integr...
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| Format: | Article |
| Language: | English |
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Nature Publishing Group
2025-04-01
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| Series: | Light: Science & Applications |
| Online Access: | https://doi.org/10.1038/s41377-025-01821-1 |
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| author | Xiaojun Xie Chao Wei Xingchen He Yake Chen Chenghao Wang Jihui Sun Lin Jiang Jia Ye Xihua Zou Wei Pan Lianshan Yan |
| author_facet | Xiaojun Xie Chao Wei Xingchen He Yake Chen Chenghao Wang Jihui Sun Lin Jiang Jia Ye Xihua Zou Wei Pan Lianshan Yan |
| author_sort | Xiaojun Xie |
| collection | DOAJ |
| description | Abstract The rapid advancement of the thin-film lithium niobate (LiNbO3) platform has established it as a premier choice for high-performance photonics integrated circuits. However, the scalability and cost-efficiency of this platform are hindered by the reliance on chip-level fabrication and integration for passive and active components, necessitating a robust wafer-level LiNbO3 heterogeneous integration platform. Despite its critical role in enabling ultrahigh-speed optical interconnects, as well as optical mmWave/THz sensing and communication, the realization of ultrahigh-speed photodiodes and optical coherent receivers on the LiNbO₃ platform remains an unresolved challenge. This is primarily due to the challenges associated with the large-scale integration of direct-bandgap materials. To address these challenges, we have developed a scalable, high-speed InP-LiNbO₃ wafer-level heterogeneous integration platform. This platform facilitates the fabrication of ultrahigh-speed photodiodes with a bandwidth of 140 GHz, capable of receiving high-quality 100-Gbaud pulse amplitude modulation (PAM4) signals. Moreover, we demonstrate a seven-channel, single-polarization I–Q coherent receiver chip with an aggregate receiving capacity of 3.584 Tbit s-1. This coherent receiver exhibits a balanced detection bandwidth of 60 GHz and a common mode rejection ratio (CMRR) exceeding 20 dB. It achieves receiving capacities of 600 Gbit s-1 λ-1 with a 100-Gbaud 64-QAM signal and 512 Gbit s-1 λ-1 with a 128-Gbaud 16-QAM signal. Furthermore, energy consumption as low as 9.6 fJ bit-1 and 13.5 fJ bit-1 is achieved for 200 Gbit s-1 and 400 Gbit s-1 capacities, respectively. Our work provides a viable pathway toward enabling Pbps hyperscale data center interconnects, as well as optical mmWave/THz sensing and communication. |
| format | Article |
| id | doaj-art-56fccf4bd55a4c18b7a0d42e44afa446 |
| institution | OA Journals |
| issn | 2047-7538 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Nature Publishing Group |
| record_format | Article |
| series | Light: Science & Applications |
| spelling | doaj-art-56fccf4bd55a4c18b7a0d42e44afa4462025-08-20T02:20:05ZengNature Publishing GroupLight: Science & Applications2047-75382025-04-0114111210.1038/s41377-025-01821-1A 3.584 Tbps coherent receiver chip on InP-LiNbO3 wafer-level integration platformXiaojun Xie0Chao Wei1Xingchen He2Yake Chen3Chenghao Wang4Jihui Sun5Lin Jiang6Jia Ye7Xihua Zou8Wei Pan9Lianshan Yan10Key Laboratory of Photonic-Electronic Integration and Communication-Sensing Convergence, School of Information Science and Technology, Southwest Jiaotong UniversityKey Laboratory of Photonic-Electronic Integration and Communication-Sensing Convergence, School of Information Science and Technology, Southwest Jiaotong UniversityKey Laboratory of Photonic-Electronic Integration and Communication-Sensing Convergence, School of Information Science and Technology, Southwest Jiaotong UniversityKey Laboratory of Photonic-Electronic Integration and Communication-Sensing Convergence, School of Information Science and Technology, Southwest Jiaotong UniversityKey Laboratory of Photonic-Electronic Integration and Communication-Sensing Convergence, School of Information Science and Technology, Southwest Jiaotong UniversityKey Laboratory of Photonic-Electronic Integration and Communication-Sensing Convergence, School of Information Science and Technology, Southwest Jiaotong UniversityKey Laboratory of Photonic-Electronic Integration and Communication-Sensing Convergence, School of Information Science and Technology, Southwest Jiaotong UniversityKey Laboratory of Photonic-Electronic Integration and Communication-Sensing Convergence, School of Information Science and Technology, Southwest Jiaotong UniversityKey Laboratory of Photonic-Electronic Integration and Communication-Sensing Convergence, School of Information Science and Technology, Southwest Jiaotong UniversityKey Laboratory of Photonic-Electronic Integration and Communication-Sensing Convergence, School of Information Science and Technology, Southwest Jiaotong UniversityKey Laboratory of Photonic-Electronic Integration and Communication-Sensing Convergence, School of Information Science and Technology, Southwest Jiaotong UniversityAbstract The rapid advancement of the thin-film lithium niobate (LiNbO3) platform has established it as a premier choice for high-performance photonics integrated circuits. However, the scalability and cost-efficiency of this platform are hindered by the reliance on chip-level fabrication and integration for passive and active components, necessitating a robust wafer-level LiNbO3 heterogeneous integration platform. Despite its critical role in enabling ultrahigh-speed optical interconnects, as well as optical mmWave/THz sensing and communication, the realization of ultrahigh-speed photodiodes and optical coherent receivers on the LiNbO₃ platform remains an unresolved challenge. This is primarily due to the challenges associated with the large-scale integration of direct-bandgap materials. To address these challenges, we have developed a scalable, high-speed InP-LiNbO₃ wafer-level heterogeneous integration platform. This platform facilitates the fabrication of ultrahigh-speed photodiodes with a bandwidth of 140 GHz, capable of receiving high-quality 100-Gbaud pulse amplitude modulation (PAM4) signals. Moreover, we demonstrate a seven-channel, single-polarization I–Q coherent receiver chip with an aggregate receiving capacity of 3.584 Tbit s-1. This coherent receiver exhibits a balanced detection bandwidth of 60 GHz and a common mode rejection ratio (CMRR) exceeding 20 dB. It achieves receiving capacities of 600 Gbit s-1 λ-1 with a 100-Gbaud 64-QAM signal and 512 Gbit s-1 λ-1 with a 128-Gbaud 16-QAM signal. Furthermore, energy consumption as low as 9.6 fJ bit-1 and 13.5 fJ bit-1 is achieved for 200 Gbit s-1 and 400 Gbit s-1 capacities, respectively. Our work provides a viable pathway toward enabling Pbps hyperscale data center interconnects, as well as optical mmWave/THz sensing and communication.https://doi.org/10.1038/s41377-025-01821-1 |
| spellingShingle | Xiaojun Xie Chao Wei Xingchen He Yake Chen Chenghao Wang Jihui Sun Lin Jiang Jia Ye Xihua Zou Wei Pan Lianshan Yan A 3.584 Tbps coherent receiver chip on InP-LiNbO3 wafer-level integration platform Light: Science & Applications |
| title | A 3.584 Tbps coherent receiver chip on InP-LiNbO3 wafer-level integration platform |
| title_full | A 3.584 Tbps coherent receiver chip on InP-LiNbO3 wafer-level integration platform |
| title_fullStr | A 3.584 Tbps coherent receiver chip on InP-LiNbO3 wafer-level integration platform |
| title_full_unstemmed | A 3.584 Tbps coherent receiver chip on InP-LiNbO3 wafer-level integration platform |
| title_short | A 3.584 Tbps coherent receiver chip on InP-LiNbO3 wafer-level integration platform |
| title_sort | 3 584 tbps coherent receiver chip on inp linbo3 wafer level integration platform |
| url | https://doi.org/10.1038/s41377-025-01821-1 |
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