Two‐Dimensional MoS2‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation
Abstract Neuromorphic computing, a promising solution to the von Neumann bottleneck, is paving the way for the development of next‐generation computing and sensing systems. Axon‐multisynapse systems enable the execution of sophisticated tasks, making them not only desirable but essential for future...
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| Format: | Article |
| Language: | English |
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Wiley
2024-12-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202408210 |
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| author | Lei Liu Peng Gao Mengru Zhang Jiadu Dou Chunsen Liu Tuo Shi Hao Huang Chunlan Wang Han He Zijun Chen Yang Chai Jianlu Wang Xuming Zou Lei Liao Jingli Wang Peng Zhou |
| author_facet | Lei Liu Peng Gao Mengru Zhang Jiadu Dou Chunsen Liu Tuo Shi Hao Huang Chunlan Wang Han He Zijun Chen Yang Chai Jianlu Wang Xuming Zou Lei Liao Jingli Wang Peng Zhou |
| author_sort | Lei Liu |
| collection | DOAJ |
| description | Abstract Neuromorphic computing, a promising solution to the von Neumann bottleneck, is paving the way for the development of next‐generation computing and sensing systems. Axon‐multisynapse systems enable the execution of sophisticated tasks, making them not only desirable but essential for future applications in this field. Anisotropic materials, which have different properties in different directions, are being used to create artificial synapses that can mimic the functions of biological axon‐multisynapse systems. However, the restricted variety and unadjustable conductive ratio limit their applications. Here, it is shown that anisotropic artificial synapses can be achieved on isotropic materials with externally localized doping via electron beam irradiation (EBI) and purposefully induced trap sites. By employing the synapses along different directions, artificial neural networks (ANNs) are constructed to accomplish variable neuromorphic tasks with optimized performance. The localized doping method expands the axon‐multisynapse device family, illustrating that this approach has tremendous potentials in next‐generation computing and sensing systems. |
| format | Article |
| id | doaj-art-56d9d023abbd42e4a11e623760e617a5 |
| institution | OA Journals |
| issn | 2198-3844 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-56d9d023abbd42e4a11e623760e617a52025-08-20T02:19:01ZengWileyAdvanced Science2198-38442024-12-011145n/an/a10.1002/advs.202408210Two‐Dimensional MoS2‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam IrradiationLei Liu0Peng Gao1Mengru Zhang2Jiadu Dou3Chunsen Liu4Tuo Shi5Hao Huang6Chunlan Wang7Han He8Zijun Chen9Yang Chai10Jianlu Wang11Xuming Zou12Lei Liao13Jingli Wang14Peng Zhou15State Key Laboratory of Integrated Chip and System Frontier Institute of Chip and System Fudan University Shanghai 200433 ChinaState Key Laboratory of Integrated Chip and System Frontier Institute of Chip and System Fudan University Shanghai 200433 ChinaState Key Laboratory of Integrated Chip and System Frontier Institute of Chip and System Fudan University Shanghai 200433 ChinaState Key Laboratory of Integrated Chip and System Frontier Institute of Chip and System Fudan University Shanghai 200433 ChinaState Key Laboratory of Integrated Chip and System Frontier Institute of Chip and System Fudan University Shanghai 200433 ChinaZhejiang Laboratory Hangzhou 311122 ChinaState Key Laboratory of Featured Metal Materials and Life‐cycle Safety for Composite Structures School of Resources Environment and Materials Guangxi University Nanning 530004 ChinaSchool of Science Xi'an Polytechnic University Xi'an 710048 ChinaState Key Laboratory of Featured Metal Materials and Life‐cycle Safety for Composite Structures School of Resources Environment and Materials Guangxi University Nanning 530004 ChinaState Key Laboratory of Featured Metal Materials and Life‐cycle Safety for Composite Structures School of Resources Environment and Materials Guangxi University Nanning 530004 ChinaDepartment of Applied Physics The Hong Kong Polytechnic University Hong Kong 999077 ChinaState Key Laboratory of Integrated Chip and System Frontier Institute of Chip and System Fudan University Shanghai 200433 ChinaCollege of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 ChinaCollege of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 ChinaState Key Laboratory of Integrated Chip and System Frontier Institute of Chip and System Fudan University Shanghai 200433 ChinaState Key Laboratory of Integrated Chip and System Frontier Institute of Chip and System Fudan University Shanghai 200433 ChinaAbstract Neuromorphic computing, a promising solution to the von Neumann bottleneck, is paving the way for the development of next‐generation computing and sensing systems. Axon‐multisynapse systems enable the execution of sophisticated tasks, making them not only desirable but essential for future applications in this field. Anisotropic materials, which have different properties in different directions, are being used to create artificial synapses that can mimic the functions of biological axon‐multisynapse systems. However, the restricted variety and unadjustable conductive ratio limit their applications. Here, it is shown that anisotropic artificial synapses can be achieved on isotropic materials with externally localized doping via electron beam irradiation (EBI) and purposefully induced trap sites. By employing the synapses along different directions, artificial neural networks (ANNs) are constructed to accomplish variable neuromorphic tasks with optimized performance. The localized doping method expands the axon‐multisynapse device family, illustrating that this approach has tremendous potentials in next‐generation computing and sensing systems.https://doi.org/10.1002/advs.202408210anisotropic synapsecolored‐digit recognitionconnection heterogeneityelectron beam irradiationlocalized dopingmultiterminal transistor |
| spellingShingle | Lei Liu Peng Gao Mengru Zhang Jiadu Dou Chunsen Liu Tuo Shi Hao Huang Chunlan Wang Han He Zijun Chen Yang Chai Jianlu Wang Xuming Zou Lei Liao Jingli Wang Peng Zhou Two‐Dimensional MoS2‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation Advanced Science anisotropic synapse colored‐digit recognition connection heterogeneity electron beam irradiation localized doping multiterminal transistor |
| title | Two‐Dimensional MoS2‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation |
| title_full | Two‐Dimensional MoS2‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation |
| title_fullStr | Two‐Dimensional MoS2‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation |
| title_full_unstemmed | Two‐Dimensional MoS2‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation |
| title_short | Two‐Dimensional MoS2‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation |
| title_sort | two dimensional mos2 based anisotropic synaptic transistor for neuromorphic computing by localized electron beam irradiation |
| topic | anisotropic synapse colored‐digit recognition connection heterogeneity electron beam irradiation localized doping multiterminal transistor |
| url | https://doi.org/10.1002/advs.202408210 |
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