Characterizing ultrashort pulses with photon energies above 1.12 eV based on transient absorption in silicon thin films
Frequency-resolved optical switching (FROSt) is a phase-matching-free characterization technique for ultrashort pulses based on transient absorption in semiconductors. So far, this technique has been limited to characterizing pulses with photon energies smaller than the bandgap of the semiconductors...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2024-01-01
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| Series: | JPhys Photonics |
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| Online Access: | https://doi.org/10.1088/2515-7647/ad9cdb |
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| author | Mayank Kumar Saadat Mokhtari Tristan Guay Adrien Leblanc Kosta Oubrerie Sohail A Jalil Elissa Haddad Gaëtan Jargot Philippe Lassonde Heide Ibrahim Giulio Vampa François Légaré |
| author_facet | Mayank Kumar Saadat Mokhtari Tristan Guay Adrien Leblanc Kosta Oubrerie Sohail A Jalil Elissa Haddad Gaëtan Jargot Philippe Lassonde Heide Ibrahim Giulio Vampa François Légaré |
| author_sort | Mayank Kumar |
| collection | DOAJ |
| description | Frequency-resolved optical switching (FROSt) is a phase-matching-free characterization technique for ultrashort pulses based on transient absorption in semiconductors. So far, this technique has been limited to characterizing pulses with photon energies smaller than the bandgap of the semiconductors used. In this work, we extend the method to characterize pulses of photon energy greater than the bandgap of the semiconductor used for characterization. We demonstrate this by characterizing ultrashort visible pulses and supercontinuum using silicon (Si) thin films deposited on a sapphire substrate. We also demonstrate that visible light sources up to a repetition rate of 250 kHz can be characterized using these samples. Therefore, this study highlights the potential of FROSt as a suitable technique for the temporal characterization of weak visible to infrared pulses, including high harmonics generated in solids. |
| format | Article |
| id | doaj-art-56ceb4199deb48bfb5e33ddc9b6cfbfc |
| institution | OA Journals |
| issn | 2515-7647 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | JPhys Photonics |
| spelling | doaj-art-56ceb4199deb48bfb5e33ddc9b6cfbfc2025-08-20T02:34:34ZengIOP PublishingJPhys Photonics2515-76472024-01-017101500810.1088/2515-7647/ad9cdbCharacterizing ultrashort pulses with photon energies above 1.12 eV based on transient absorption in silicon thin filmsMayank Kumar0https://orcid.org/0000-0002-9237-1567Saadat Mokhtari1Tristan Guay2Adrien Leblanc3https://orcid.org/0000-0002-5894-6611Kosta Oubrerie4https://orcid.org/0000-0002-6676-6856Sohail A Jalil5https://orcid.org/0000-0002-3149-6374Elissa Haddad6Gaëtan Jargot7Philippe Lassonde8Heide Ibrahim9https://orcid.org/0000-0001-6371-8501Giulio Vampa10François Légaré11https://orcid.org/0000-0002-3065-7156Advanced Laser Light Source (ALLS), Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique (INRS-EMT) , Varennes, Québec, 1650 Boulevard Lionel-Boulet, CanadaAdvanced Laser Light Source (ALLS), Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique (INRS-EMT) , Varennes, Québec, 1650 Boulevard Lionel-Boulet, Canada; Joint Attosecond Science Laboratory, National Research Council of Canada and University of Ottawa , 100 Sussex Drive, Ottawa, Ontario K1A 0R6, CanadaAdvanced Laser Light Source (ALLS), Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique (INRS-EMT) , Varennes, Québec, 1650 Boulevard Lionel-Boulet, CanadaLaboratoire d’Optique Appliquée, Ecole Polytechnique , ENSTA, CNRS, Université Paris Saclay, Palaiseau, FranceAdvanced Laser Light Source (ALLS), Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique (INRS-EMT) , Varennes, Québec, 1650 Boulevard Lionel-Boulet, Canada; Université Paris-Saclay , CEA, LIDYL, 91191 Gif-sur-Yvette, FranceJoint Attosecond Science Laboratory, National Research Council of Canada and University of Ottawa , 100 Sussex Drive, Ottawa, Ontario K1A 0R6, CanadaAdvanced Laser Light Source (ALLS), Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique (INRS-EMT) , Varennes, Québec, 1650 Boulevard Lionel-Boulet, CanadaAdvanced Laser Light Source (ALLS), Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique (INRS-EMT) , Varennes, Québec, 1650 Boulevard Lionel-Boulet, CanadaAdvanced Laser Light Source (ALLS), Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique (INRS-EMT) , Varennes, Québec, 1650 Boulevard Lionel-Boulet, CanadaAdvanced Laser Light Source (ALLS), Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique (INRS-EMT) , Varennes, Québec, 1650 Boulevard Lionel-Boulet, Canada; Department of Physics, University of Ottawa , 150 Louis-Pasteur Pvt, Ottawa, Ontario K1N 6N5, CanadaJoint Attosecond Science Laboratory, National Research Council of Canada and University of Ottawa , 100 Sussex Drive, Ottawa, Ontario K1A 0R6, CanadaAdvanced Laser Light Source (ALLS), Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique (INRS-EMT) , Varennes, Québec, 1650 Boulevard Lionel-Boulet, CanadaFrequency-resolved optical switching (FROSt) is a phase-matching-free characterization technique for ultrashort pulses based on transient absorption in semiconductors. So far, this technique has been limited to characterizing pulses with photon energies smaller than the bandgap of the semiconductors used. In this work, we extend the method to characterize pulses of photon energy greater than the bandgap of the semiconductor used for characterization. We demonstrate this by characterizing ultrashort visible pulses and supercontinuum using silicon (Si) thin films deposited on a sapphire substrate. We also demonstrate that visible light sources up to a repetition rate of 250 kHz can be characterized using these samples. Therefore, this study highlights the potential of FROSt as a suitable technique for the temporal characterization of weak visible to infrared pulses, including high harmonics generated in solids.https://doi.org/10.1088/2515-7647/ad9cdbpulse characterizationsiliconfrequency-resolved optical switchingtransient absorption |
| spellingShingle | Mayank Kumar Saadat Mokhtari Tristan Guay Adrien Leblanc Kosta Oubrerie Sohail A Jalil Elissa Haddad Gaëtan Jargot Philippe Lassonde Heide Ibrahim Giulio Vampa François Légaré Characterizing ultrashort pulses with photon energies above 1.12 eV based on transient absorption in silicon thin films JPhys Photonics pulse characterization silicon frequency-resolved optical switching transient absorption |
| title | Characterizing ultrashort pulses with photon energies above 1.12 eV based on transient absorption in silicon thin films |
| title_full | Characterizing ultrashort pulses with photon energies above 1.12 eV based on transient absorption in silicon thin films |
| title_fullStr | Characterizing ultrashort pulses with photon energies above 1.12 eV based on transient absorption in silicon thin films |
| title_full_unstemmed | Characterizing ultrashort pulses with photon energies above 1.12 eV based on transient absorption in silicon thin films |
| title_short | Characterizing ultrashort pulses with photon energies above 1.12 eV based on transient absorption in silicon thin films |
| title_sort | characterizing ultrashort pulses with photon energies above 1 12 ev based on transient absorption in silicon thin films |
| topic | pulse characterization silicon frequency-resolved optical switching transient absorption |
| url | https://doi.org/10.1088/2515-7647/ad9cdb |
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