Thermal annealing of clusters and point defects in n-Si (Cz) irradiated by fast-pile neutrons

Thermal annealing of clusters and point defects in n-Si (Cz) irradiated by fast-pile neutrons

Thermal stability of clusters and point defects in n-Si grown by Czochralski technique (Cz) was studied after irradiation by thefluence ~ (2 ÷ 4) ⋅ 1013 no ⋅сm-2 of fast-pile neutrons. The effective concentration of carriers after series of isochronal and isothermal annealings of irradiated n-type s...

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Bibliographic Details
Main Authors: A. P. Dolgolenko, M. D. Varentsov, G. P. Gaidar, P. G. Litovchenko
Format: Article
Language:English
Published: Institute for Nuclear Research, National Academy of Sciences of Ukraine 2008-08-01
Series:Ядерна фізика та енергетика
Online Access:http://jnpae.kinr.kiev.ua/24(2)/Articles_PDF/jnpae-2008-2(24)-0073-Dolgolenko.pdf
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