Elaboration and Characterization of n-Type Organic Semiconductor (Fullerene C<sub>60</sub>) Deposed by Ultrasonic Technique for Sustainable OTFT Fabrication

This study focuses on the deposition of fullerene (C<sub>60</sub>) as thin film on glass substrate by ultrasonic chemical bath deposition (UCBD) processing, under ambient temperature. Highly effective results were obtained from the films based on the solution of C<sub>60</sub>...

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Main Authors: Nora Amele Abdeslam, Aya Latif, Zahia Tigrine, Nadia Lehraki, Lobna Messeddek, Seif El Islam Lebouachera
Format: Article
Language:English
Published: MDPI AG 2025-02-01
Series:Applied Sciences
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Online Access:https://www.mdpi.com/2076-3417/15/5/2402
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author Nora Amele Abdeslam
Aya Latif
Zahia Tigrine
Nadia Lehraki
Lobna Messeddek
Seif El Islam Lebouachera
author_facet Nora Amele Abdeslam
Aya Latif
Zahia Tigrine
Nadia Lehraki
Lobna Messeddek
Seif El Islam Lebouachera
author_sort Nora Amele Abdeslam
collection DOAJ
description This study focuses on the deposition of fullerene (C<sub>60</sub>) as thin film on glass substrate by ultrasonic chemical bath deposition (UCBD) processing, under ambient temperature. Highly effective results were obtained from the films based on the solution of C<sub>60</sub> dissolved in toluene mixed with 2-methoxyethanol. The obtained films were characterized by X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDS). The XRD examination of the thin films reveals the presence of the C<sub>60</sub> cubic phase compared to the powder reference. The molecular structure obtained by Rietveld refinement shows no bonding between the molecules in C<sub>60</sub> powder, while in the deposed thin film the bonding is established. The molecules are bonded between them by pentagons of the right and left molecule. Each four neighbor molecules bond between them and they are all able to geometrically tie to the neighboring molecules under a crystalline FCC structure. The Sherrer and W-H methods were used to investigate microstructural parameters. The lattice parameter and the crystallite size show the same variation tendency. The average lattice parameter for the powder and the deposed films C<sub>60</sub>-3h, C<sub>60</sub>-5h, and C<sub>60</sub>-8h is 14.0652, 14.1901, 14.0529, and 14.1848 Å, respectively, and the crystallite size calculated by the Sherrer method is 37.51, 38.98, 34.35, and 41.54 nm, respectively, as well. The IR spectrum indicated the presence of chemical π bonds (c=c) that are very suitable for enhancing the electronic properties of the material, and SEM analysis illustrated a dense, homogeneous without pinhole structures in the film morphology. Moreover, EDS emphasizes the presence of high carbon concentration and fewer stranger atoms. As a result, despite the UCBD technique being old and not very often applied in the field of organic materials, it is still a cost effective and good alternative method for organic thin film deposition.
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spelling doaj-art-5603f85d8bc74df2ac7f2cc993b5ec172025-08-20T02:59:07ZengMDPI AGApplied Sciences2076-34172025-02-01155240210.3390/app15052402Elaboration and Characterization of n-Type Organic Semiconductor (Fullerene C<sub>60</sub>) Deposed by Ultrasonic Technique for Sustainable OTFT FabricationNora Amele Abdeslam0Aya Latif1Zahia Tigrine2Nadia Lehraki3Lobna Messeddek4Seif El Islam Lebouachera5Laboratory of Semiconducting and Metallic Materials (LMSM), Biskra University, Biskra 07000, AlgeriaLaboratory of Semiconducting and Metallic Materials (LMSM), Biskra University, Biskra 07000, AlgeriaUnité de Développement des Equipements Solaires, UDES/Centre de Développement des Energies Renouvelables, CDER, Bou-Ismail 42415, AlgeriaLaboratory of Thin Films Physics and Applications (LPCMA), University of Biskra, BP 145 RP, Biskra 07000, AlgeriaLaboratory of Semiconducting and Metallic Materials (LMSM), Biskra University, Biskra 07000, AlgeriaInstitut des Sciences Analytiques et de Physico-Chimie Pour l’Environnement et les Matériaux, IPREM, UMR 5254, CNRS Université de Pau et Des Pays de l’Adour/E2S, 2 Avenue P. Angot, Technopôle Hélioparc, 64000 Pau, FranceThis study focuses on the deposition of fullerene (C<sub>60</sub>) as thin film on glass substrate by ultrasonic chemical bath deposition (UCBD) processing, under ambient temperature. Highly effective results were obtained from the films based on the solution of C<sub>60</sub> dissolved in toluene mixed with 2-methoxyethanol. The obtained films were characterized by X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDS). The XRD examination of the thin films reveals the presence of the C<sub>60</sub> cubic phase compared to the powder reference. The molecular structure obtained by Rietveld refinement shows no bonding between the molecules in C<sub>60</sub> powder, while in the deposed thin film the bonding is established. The molecules are bonded between them by pentagons of the right and left molecule. Each four neighbor molecules bond between them and they are all able to geometrically tie to the neighboring molecules under a crystalline FCC structure. The Sherrer and W-H methods were used to investigate microstructural parameters. The lattice parameter and the crystallite size show the same variation tendency. The average lattice parameter for the powder and the deposed films C<sub>60</sub>-3h, C<sub>60</sub>-5h, and C<sub>60</sub>-8h is 14.0652, 14.1901, 14.0529, and 14.1848 Å, respectively, and the crystallite size calculated by the Sherrer method is 37.51, 38.98, 34.35, and 41.54 nm, respectively, as well. The IR spectrum indicated the presence of chemical π bonds (c=c) that are very suitable for enhancing the electronic properties of the material, and SEM analysis illustrated a dense, homogeneous without pinhole structures in the film morphology. Moreover, EDS emphasizes the presence of high carbon concentration and fewer stranger atoms. As a result, despite the UCBD technique being old and not very often applied in the field of organic materials, it is still a cost effective and good alternative method for organic thin film deposition.https://www.mdpi.com/2076-3417/15/5/2402fullerene (C<sub>60</sub>)organic semiconductorcharacterizationabsorptioncrystallinitydeposition technique
spellingShingle Nora Amele Abdeslam
Aya Latif
Zahia Tigrine
Nadia Lehraki
Lobna Messeddek
Seif El Islam Lebouachera
Elaboration and Characterization of n-Type Organic Semiconductor (Fullerene C<sub>60</sub>) Deposed by Ultrasonic Technique for Sustainable OTFT Fabrication
Applied Sciences
fullerene (C<sub>60</sub>)
organic semiconductor
characterization
absorption
crystallinity
deposition technique
title Elaboration and Characterization of n-Type Organic Semiconductor (Fullerene C<sub>60</sub>) Deposed by Ultrasonic Technique for Sustainable OTFT Fabrication
title_full Elaboration and Characterization of n-Type Organic Semiconductor (Fullerene C<sub>60</sub>) Deposed by Ultrasonic Technique for Sustainable OTFT Fabrication
title_fullStr Elaboration and Characterization of n-Type Organic Semiconductor (Fullerene C<sub>60</sub>) Deposed by Ultrasonic Technique for Sustainable OTFT Fabrication
title_full_unstemmed Elaboration and Characterization of n-Type Organic Semiconductor (Fullerene C<sub>60</sub>) Deposed by Ultrasonic Technique for Sustainable OTFT Fabrication
title_short Elaboration and Characterization of n-Type Organic Semiconductor (Fullerene C<sub>60</sub>) Deposed by Ultrasonic Technique for Sustainable OTFT Fabrication
title_sort elaboration and characterization of n type organic semiconductor fullerene c sub 60 sub deposed by ultrasonic technique for sustainable otft fabrication
topic fullerene (C<sub>60</sub>)
organic semiconductor
characterization
absorption
crystallinity
deposition technique
url https://www.mdpi.com/2076-3417/15/5/2402
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