Ambient Moisture‐Induced Self Alignment of Polarization in Ferroelectric Hafnia
Abstract The discovery of nanoscale ferroelectricity in hafnia (HfO2) has paved the way for next generation high‐density, non‐volatile devices. Although the surface conditions of nanoscale HfO2 present one of the fundamental mechanism origins, the impact of external environment on HfO2 ferroelectric...
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| Format: | Article |
| Language: | English |
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Wiley
2024-12-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202410354 |
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| author | Lu‐Qi Wei Zhao Guan Wen‐Yi Tong Wen‐Cheng Fan Abliz Mattursun Bin‐Bin Chen Ping‐Hua Xiang Genquan Han Chun‐Gang Duan Ni Zhong |
| author_facet | Lu‐Qi Wei Zhao Guan Wen‐Yi Tong Wen‐Cheng Fan Abliz Mattursun Bin‐Bin Chen Ping‐Hua Xiang Genquan Han Chun‐Gang Duan Ni Zhong |
| author_sort | Lu‐Qi Wei |
| collection | DOAJ |
| description | Abstract The discovery of nanoscale ferroelectricity in hafnia (HfO2) has paved the way for next generation high‐density, non‐volatile devices. Although the surface conditions of nanoscale HfO2 present one of the fundamental mechanism origins, the impact of external environment on HfO2 ferroelectricity remains unknown. In this study, the deleterious effect of ambient moisture is examined on the stability of ferroelectricity using Hf0.5Zr0.5O2 (HZO) films as a model system. It is found that the development of an intrinsic electric field due to the adsorption of atmospheric water molecules onto the film's surface significantly impairs the properties of domain retention and polarization stability. Nonetheless, vacuum heating efficiently counteracts the adverse effects of water adsorption, which restores the symmetric electrical characteristics and polarization stability. This work furnishes a novel perspective on previous extensive studies, demonstrating significant impact of surface water on HfO2‐based ferroelectrics, and establishes the design paradigm for the future evolution of HfO2‐based multifunctional electronic devices. |
| format | Article |
| id | doaj-art-54f1bba67bad40908cfd86657bfb7cd2 |
| institution | OA Journals |
| issn | 2198-3844 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-54f1bba67bad40908cfd86657bfb7cd22025-08-20T02:01:00ZengWileyAdvanced Science2198-38442024-12-011148n/an/a10.1002/advs.202410354Ambient Moisture‐Induced Self Alignment of Polarization in Ferroelectric HafniaLu‐Qi Wei0Zhao Guan1Wen‐Yi Tong2Wen‐Cheng Fan3Abliz Mattursun4Bin‐Bin Chen5Ping‐Hua Xiang6Genquan Han7Chun‐Gang Duan8Ni Zhong9Key Laboratory of Polar Materials and Devices Ministry of Education Shanghai Center of Brain‐inspired Intelligent Materials and Devices East China Normal University Shanghai 200241 ChinaKey Laboratory of Polar Materials and Devices Ministry of Education Shanghai Center of Brain‐inspired Intelligent Materials and Devices East China Normal University Shanghai 200241 ChinaKey Laboratory of Polar Materials and Devices Ministry of Education Shanghai Center of Brain‐inspired Intelligent Materials and Devices East China Normal University Shanghai 200241 ChinaKey Laboratory of Polar Materials and Devices Ministry of Education Shanghai Center of Brain‐inspired Intelligent Materials and Devices East China Normal University Shanghai 200241 ChinaKey Laboratory of Polar Materials and Devices Ministry of Education Shanghai Center of Brain‐inspired Intelligent Materials and Devices East China Normal University Shanghai 200241 ChinaKey Laboratory of Polar Materials and Devices Ministry of Education Shanghai Center of Brain‐inspired Intelligent Materials and Devices East China Normal University Shanghai 200241 ChinaKey Laboratory of Polar Materials and Devices Ministry of Education Shanghai Center of Brain‐inspired Intelligent Materials and Devices East China Normal University Shanghai 200241 ChinaSchool of Microelectronics Xidian University Xi'an 710071 ChinaKey Laboratory of Polar Materials and Devices Ministry of Education Shanghai Center of Brain‐inspired Intelligent Materials and Devices East China Normal University Shanghai 200241 ChinaKey Laboratory of Polar Materials and Devices Ministry of Education Shanghai Center of Brain‐inspired Intelligent Materials and Devices East China Normal University Shanghai 200241 ChinaAbstract The discovery of nanoscale ferroelectricity in hafnia (HfO2) has paved the way for next generation high‐density, non‐volatile devices. Although the surface conditions of nanoscale HfO2 present one of the fundamental mechanism origins, the impact of external environment on HfO2 ferroelectricity remains unknown. In this study, the deleterious effect of ambient moisture is examined on the stability of ferroelectricity using Hf0.5Zr0.5O2 (HZO) films as a model system. It is found that the development of an intrinsic electric field due to the adsorption of atmospheric water molecules onto the film's surface significantly impairs the properties of domain retention and polarization stability. Nonetheless, vacuum heating efficiently counteracts the adverse effects of water adsorption, which restores the symmetric electrical characteristics and polarization stability. This work furnishes a novel perspective on previous extensive studies, demonstrating significant impact of surface water on HfO2‐based ferroelectrics, and establishes the design paradigm for the future evolution of HfO2‐based multifunctional electronic devices.https://doi.org/10.1002/advs.202410354ferroelectric materialsHfO2‐basedHZOPFMwater |
| spellingShingle | Lu‐Qi Wei Zhao Guan Wen‐Yi Tong Wen‐Cheng Fan Abliz Mattursun Bin‐Bin Chen Ping‐Hua Xiang Genquan Han Chun‐Gang Duan Ni Zhong Ambient Moisture‐Induced Self Alignment of Polarization in Ferroelectric Hafnia Advanced Science ferroelectric materials HfO2‐based HZO PFM water |
| title | Ambient Moisture‐Induced Self Alignment of Polarization in Ferroelectric Hafnia |
| title_full | Ambient Moisture‐Induced Self Alignment of Polarization in Ferroelectric Hafnia |
| title_fullStr | Ambient Moisture‐Induced Self Alignment of Polarization in Ferroelectric Hafnia |
| title_full_unstemmed | Ambient Moisture‐Induced Self Alignment of Polarization in Ferroelectric Hafnia |
| title_short | Ambient Moisture‐Induced Self Alignment of Polarization in Ferroelectric Hafnia |
| title_sort | ambient moisture induced self alignment of polarization in ferroelectric hafnia |
| topic | ferroelectric materials HfO2‐based HZO PFM water |
| url | https://doi.org/10.1002/advs.202410354 |
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