A 0D Ge(II)-Halide-Based Perovskite with Enhanced Semiconducting Behavior for Electronic Capacitors
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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American Chemical Society
2024-10-01
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| Series: | ACS Omega |
| Online Access: | https://doi.org/10.1021/acsomega.4c05255 |
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| author | Emna Ben Messaoud Dhouha Abid Slim Elleuch Abderrazek Oueslati Philippe Guionneau Stanislav Pechev Nathalie Daro Zakaria Elaoud |
| author_facet | Emna Ben Messaoud Dhouha Abid Slim Elleuch Abderrazek Oueslati Philippe Guionneau Stanislav Pechev Nathalie Daro Zakaria Elaoud |
| author_sort | Emna Ben Messaoud |
| collection | DOAJ |
| format | Article |
| id | doaj-art-547b145d2e664f93a24845fc9fdb5ef2 |
| institution | OA Journals |
| issn | 2470-1343 |
| language | English |
| publishDate | 2024-10-01 |
| publisher | American Chemical Society |
| record_format | Article |
| series | ACS Omega |
| spelling | doaj-art-547b145d2e664f93a24845fc9fdb5ef22025-08-20T02:09:27ZengAmerican Chemical SocietyACS Omega2470-13432024-10-01942428684288210.1021/acsomega.4c05255A 0D Ge(II)-Halide-Based Perovskite with Enhanced Semiconducting Behavior for Electronic CapacitorsEmna Ben Messaoud0Dhouha Abid1Slim Elleuch2Abderrazek Oueslati3Philippe Guionneau4Stanislav Pechev5Nathalie Daro6Zakaria Elaoud7Laboratory Physical-Chemistry of Solid-State, Faculty of Sciences, University of Sfax, Sfax, TunisiaLaboratory Physical-Chemistry of Solid-State, Faculty of Sciences, University of Sfax, Sfax, TunisiaLaboratory of Applied Physics, Faculty of Sciences, University of Sfax, Sfax, TunisiaLaboratory of Spectroscopic Characterization and Optical Materials, Faculty of Sciences, University of Sfax, Sfax, TunisiaUniv. Bordeaux, CNRS, Bordeaux INP, ICMCB, UMR 5026, Pessac, FranceUniv. Bordeaux, CNRS, Bordeaux INP, ICMCB, UMR 5026, Pessac, FranceUniv. Bordeaux, CNRS, Bordeaux INP, ICMCB, UMR 5026, Pessac, FranceLaboratory Physical-Chemistry of Solid-State, Faculty of Sciences, University of Sfax, Sfax, Tunisiahttps://doi.org/10.1021/acsomega.4c05255 |
| spellingShingle | Emna Ben Messaoud Dhouha Abid Slim Elleuch Abderrazek Oueslati Philippe Guionneau Stanislav Pechev Nathalie Daro Zakaria Elaoud A 0D Ge(II)-Halide-Based Perovskite with Enhanced Semiconducting Behavior for Electronic Capacitors ACS Omega |
| title | A 0D Ge(II)-Halide-Based Perovskite with Enhanced Semiconducting Behavior for Electronic Capacitors |
| title_full | A 0D Ge(II)-Halide-Based Perovskite with Enhanced Semiconducting Behavior for Electronic Capacitors |
| title_fullStr | A 0D Ge(II)-Halide-Based Perovskite with Enhanced Semiconducting Behavior for Electronic Capacitors |
| title_full_unstemmed | A 0D Ge(II)-Halide-Based Perovskite with Enhanced Semiconducting Behavior for Electronic Capacitors |
| title_short | A 0D Ge(II)-Halide-Based Perovskite with Enhanced Semiconducting Behavior for Electronic Capacitors |
| title_sort | 0d ge ii halide based perovskite with enhanced semiconducting behavior for electronic capacitors |
| url | https://doi.org/10.1021/acsomega.4c05255 |
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