APA (7th ed.) Citation

Messaoud, E. B., Abid, D., Elleuch, S., Oueslati, A., Guionneau, P., Pechev, S., . . . Elaoud, Z. A 0D Ge(II)-Halide-Based Perovskite with Enhanced Semiconducting Behavior for Electronic Capacitors. American Chemical Society.

Chicago Style (17th ed.) Citation

Messaoud, Emna Ben, Dhouha Abid, Slim Elleuch, Abderrazek Oueslati, Philippe Guionneau, Stanislav Pechev, Nathalie Daro, and Zakaria Elaoud. A 0D Ge(II)-Halide-Based Perovskite with Enhanced Semiconducting Behavior for Electronic Capacitors. American Chemical Society.

MLA (9th ed.) Citation

Messaoud, Emna Ben, et al. A 0D Ge(II)-Halide-Based Perovskite with Enhanced Semiconducting Behavior for Electronic Capacitors. American Chemical Society.