Robust and Transient Write‐Once‐Read‐Many‐Times Memory Device Based on Hybrid Perovskite Film with Novel Room Temperature Molten Salt Solvent

Robust and Transient Write‐Once‐Read‐Many‐Times Memory Device Based on Hybrid Perovskite Film with Novel Room Temperature Molten Salt Solvent

Abstract Organic–inorganic hybrid perovskites (OIHPs) have emerged as a novel class of functional materials with applications in solar cells, photodetectors, light‐emitting diodes, and resistive switching memories. Generally, perovskite films are fabricated with toxic solvents and antisolvent techni...

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Bibliographic Details
Main Authors: Bixin Li, Hao Yin, Fei Xia, Bo Sun, Shiyang Zhang, Yingdong Xia, Yonghua Chen, Wei Huang
Format: Article
Language:English
Published: Wiley-VCH 2020-06-01
Series:Advanced Electronic Materials
Subjects:
conductive filaments
resistive switching
uniform CH 3NH 3PbBr 3 films
WORM memory
Online Access:https://doi.org/10.1002/aelm.202000109
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Summary:Abstract Organic–inorganic hybrid perovskites (OIHPs) have emerged as a novel class of functional materials with applications in solar cells, photodetectors, light‐emitting diodes, and resistive switching memories. Generally, perovskite films are fabricated with toxic solvents and antisolvent technique under inert atmosphere, which limits the commercial applications of OIHP‐based devices. To address this issue, uniform CH3NH3PbBr3 (MAPbBr3) film is fabricated through a facile one‐step spin‐coating method by directly dissolving perovskite precursor in a room‐temperature molten salt methylammonium acetate under air ambient condition. The nonvolatile resistive switching devices based on MAPbBr3 exhibit robust and reproducible write‐once‐read‐many‐times (WORM) memory properties with a large ON/OFF ratio (106), reliable retention properties (104 s), and somewhat ternary resistive characteristic. The conductive filaments in the perovskite thin film are proposed to induce the electrical conductivity switching. Additionally, the MAPbBr3 films can be dissolved rapidly in deionized water within 5 s, showing the transient characteristics. This work demonstrates a new perspective on the perovskite film fabrication and shows the potential application of MAPbBr3 in transient WORM devices.
ISSN:2199-160X

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