Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic Investigation
The dark current is a fundamental figure of merit to characterize the performance of high-sensitivity, low-noise mid- and far-infrared barrier photodetectors. In the context of HgCdTe barrier photodetectors, the trend is to use very low doping concentrations, in an attempt to minimize recombination...
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2024-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10368307/ |
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| author | Marco Vallone Matteo G. C. Alasio Alberto Tibaldi Francesco Bertazzi Stefan Hanna Anne Wegmann Detlef Eich Heinrich Figgemeier Giovanni Ghione Michele Goano |
| author_facet | Marco Vallone Matteo G. C. Alasio Alberto Tibaldi Francesco Bertazzi Stefan Hanna Anne Wegmann Detlef Eich Heinrich Figgemeier Giovanni Ghione Michele Goano |
| author_sort | Marco Vallone |
| collection | DOAJ |
| description | The dark current is a fundamental figure of merit to characterize the performance of high-sensitivity, low-noise mid- and far-infrared barrier photodetectors. In the context of HgCdTe barrier photodetectors, the trend is to use very low doping concentrations, in an attempt to minimize recombination processes. In the present work, through TCAD simulations, we delve deeper into the design of low-dark-current <inline-formula><tex-math notation="LaTeX">$p{\mathrm{B}}n$</tex-math></inline-formula> detectors, showing the possible existence of an optimum doping. This occurrence is investigated and interpreted also by means of closed-form expressions for the lifetimes, emphasizing the role of the interplay between Auger and Shockley-Read-Hall generation processes. |
| format | Article |
| id | doaj-art-53f77eab5db44d5a9faf99c2b3ab33a4 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-53f77eab5db44d5a9faf99c2b3ab33a42025-08-20T03:31:21ZengIEEEIEEE Photonics Journal1943-06552024-01-011611810.1109/JPHOT.2023.334554410368307Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic InvestigationMarco Vallone0https://orcid.org/0000-0003-3392-1810Matteo G. C. Alasio1https://orcid.org/0000-0002-5175-2769Alberto Tibaldi2https://orcid.org/0000-0002-0157-8512Francesco Bertazzi3https://orcid.org/0000-0002-9409-4807Stefan Hanna4https://orcid.org/0000-0003-3913-1043Anne Wegmann5Detlef Eich6https://orcid.org/0009-0008-2288-1108Heinrich Figgemeier7https://orcid.org/0009-0002-4860-7277Giovanni Ghione8https://orcid.org/0000-0002-2362-6458Michele Goano9https://orcid.org/0000-0003-2870-1549Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Torino, ItalyDipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Torino, ItalyDipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Torino, ItalyDipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Torino, ItalyAIM Infrarot-Module GmbH, Heilbronn, GermanyAIM Infrarot-Module GmbH, Heilbronn, GermanyAIM Infrarot-Module GmbH, Heilbronn, GermanyAIM Infrarot-Module GmbH, Heilbronn, GermanyDipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Torino, ItalyDipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Torino, ItalyThe dark current is a fundamental figure of merit to characterize the performance of high-sensitivity, low-noise mid- and far-infrared barrier photodetectors. In the context of HgCdTe barrier photodetectors, the trend is to use very low doping concentrations, in an attempt to minimize recombination processes. In the present work, through TCAD simulations, we delve deeper into the design of low-dark-current <inline-formula><tex-math notation="LaTeX">$p{\mathrm{B}}n$</tex-math></inline-formula> detectors, showing the possible existence of an optimum doping. This occurrence is investigated and interpreted also by means of closed-form expressions for the lifetimes, emphasizing the role of the interplay between Auger and Shockley-Read-Hall generation processes.https://ieeexplore.ieee.org/document/10368307/Modelingphotodetectorssemiconductor materialstheory and design |
| spellingShingle | Marco Vallone Matteo G. C. Alasio Alberto Tibaldi Francesco Bertazzi Stefan Hanna Anne Wegmann Detlef Eich Heinrich Figgemeier Giovanni Ghione Michele Goano Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic Investigation IEEE Photonics Journal Modeling photodetectors semiconductor materials theory and design |
| title | Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic Investigation |
| title_full | Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic Investigation |
| title_fullStr | Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic Investigation |
| title_full_unstemmed | Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic Investigation |
| title_short | Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic Investigation |
| title_sort | exploring optimal dark current design in hgcdte infrared barrier detectors a tcad and semianalytic investigation |
| topic | Modeling photodetectors semiconductor materials theory and design |
| url | https://ieeexplore.ieee.org/document/10368307/ |
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