Comprehensive physical and chemical properties of sulfurized Bi2S3 films prepared by CBD process
Bismuth sulfide (Bi2S3) is one of the novel semiconductors that has gained significant interest in recent years for the development of solar photovoltaics. The present work reports a comprehensive analysis of the physical and chemical properties of chemical bath deposited (CBD) Bi2S3 films upon sulf...
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Elsevier
2025-07-01
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S294982282500084X |
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| author | V. Gopala Krishna G. Phaneendra Reddy N. Revathi K.T. Ramakrishna Reddy |
| author_facet | V. Gopala Krishna G. Phaneendra Reddy N. Revathi K.T. Ramakrishna Reddy |
| author_sort | V. Gopala Krishna |
| collection | DOAJ |
| description | Bismuth sulfide (Bi2S3) is one of the novel semiconductors that has gained significant interest in recent years for the development of solar photovoltaics. The present work reports a comprehensive analysis of the physical and chemical properties of chemical bath deposited (CBD) Bi2S3 films upon sulfurization in relation to sulfurization temperature. The as-grown Bi2S3 films were subjected to sulfurization at temperatures ranging from 250 °C to 400 °C for a duration of one hour. X-ray diffraction patterns indicated the (130) plane as the predominant orientation for all sulfurized layers, which exhibited the orthorhombic crystal structure. Films prepared at 350 °C showed large crystallites with minimum lattice strain and dislocation density. Raman spectra exhibited three major peaks that correspond to the Ag and B1g vibrational modes of Bi2S3 with a space group of Pbnm. The films exhibited a rough surface morphology that increased with increasing sulfurization temperature. Energy dispersive spectroscopy study confirmed the nearly stoichiometric composition of Bi and S, whereas the X-ray photoelectron spectroscopy analyses revealed the presence of Bi3+ and S2− oxidation states. With increasing sulfurization temperature, the optical band gap values decreased from 1.66 eV to 1.37 eV, which closely aligns with optimal absorber layer requirements. Hall effect measurements revealed p-type conductivity, with the lowest resistivity value 0.24 Ω.cm at Ts = 350 °C. The Bi2S3 films sulfurized at 350 °C exhibited good structural, morphological, optical, and electrical properties that are highly suitable for absorber layers in thin-film solar cells in a cost-effective manner. |
| format | Article |
| id | doaj-art-53e72aad1fc84eb5a11a3bb27b781d12 |
| institution | DOAJ |
| issn | 2949-8228 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Next Materials |
| spelling | doaj-art-53e72aad1fc84eb5a11a3bb27b781d122025-08-20T03:15:16ZengElsevierNext Materials2949-82282025-07-01810056610.1016/j.nxmate.2025.100566Comprehensive physical and chemical properties of sulfurized Bi2S3 films prepared by CBD processV. Gopala Krishna0G. Phaneendra Reddy1N. Revathi2K.T. Ramakrishna Reddy3Solar Energy Laboratory, Department of Physics, Sri Venkateswara University, Tirupati 517502, India; Department of Physics, Government Degree College, Jaggampeta 533435, IndiaDepartment of Physics, Dr. YSR Architecture and Fine Arts University, Kadapa 516162, IndiaDepartment of Physics, Marri Laxman Reddy Institute of Technology and Management, Hyderabad 500043, IndiaSolar Energy Laboratory, Department of Physics, Sri Venkateswara University, Tirupati 517502, India; Corresponding author.Bismuth sulfide (Bi2S3) is one of the novel semiconductors that has gained significant interest in recent years for the development of solar photovoltaics. The present work reports a comprehensive analysis of the physical and chemical properties of chemical bath deposited (CBD) Bi2S3 films upon sulfurization in relation to sulfurization temperature. The as-grown Bi2S3 films were subjected to sulfurization at temperatures ranging from 250 °C to 400 °C for a duration of one hour. X-ray diffraction patterns indicated the (130) plane as the predominant orientation for all sulfurized layers, which exhibited the orthorhombic crystal structure. Films prepared at 350 °C showed large crystallites with minimum lattice strain and dislocation density. Raman spectra exhibited three major peaks that correspond to the Ag and B1g vibrational modes of Bi2S3 with a space group of Pbnm. The films exhibited a rough surface morphology that increased with increasing sulfurization temperature. Energy dispersive spectroscopy study confirmed the nearly stoichiometric composition of Bi and S, whereas the X-ray photoelectron spectroscopy analyses revealed the presence of Bi3+ and S2− oxidation states. With increasing sulfurization temperature, the optical band gap values decreased from 1.66 eV to 1.37 eV, which closely aligns with optimal absorber layer requirements. Hall effect measurements revealed p-type conductivity, with the lowest resistivity value 0.24 Ω.cm at Ts = 350 °C. The Bi2S3 films sulfurized at 350 °C exhibited good structural, morphological, optical, and electrical properties that are highly suitable for absorber layers in thin-film solar cells in a cost-effective manner.http://www.sciencedirect.com/science/article/pii/S294982282500084XBi2S3Chemical bath depositionSulfurizationRietveld refinementAtomic force microscopy |
| spellingShingle | V. Gopala Krishna G. Phaneendra Reddy N. Revathi K.T. Ramakrishna Reddy Comprehensive physical and chemical properties of sulfurized Bi2S3 films prepared by CBD process Next Materials Bi2S3 Chemical bath deposition Sulfurization Rietveld refinement Atomic force microscopy |
| title | Comprehensive physical and chemical properties of sulfurized Bi2S3 films prepared by CBD process |
| title_full | Comprehensive physical and chemical properties of sulfurized Bi2S3 films prepared by CBD process |
| title_fullStr | Comprehensive physical and chemical properties of sulfurized Bi2S3 films prepared by CBD process |
| title_full_unstemmed | Comprehensive physical and chemical properties of sulfurized Bi2S3 films prepared by CBD process |
| title_short | Comprehensive physical and chemical properties of sulfurized Bi2S3 films prepared by CBD process |
| title_sort | comprehensive physical and chemical properties of sulfurized bi2s3 films prepared by cbd process |
| topic | Bi2S3 Chemical bath deposition Sulfurization Rietveld refinement Atomic force microscopy |
| url | http://www.sciencedirect.com/science/article/pii/S294982282500084X |
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