Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics
Abstract 2D semiconductors show promise as a competitive candidate for developing future integrated circuits due to their immunity to short‐channel effects and high carrier mobility at atomic layer thicknesses. The inherent defects and Fermi level pinning effect lead to n‐type transport characterist...
Saved in:
| Main Authors: | , , , , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-12-01
|
| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202408634 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850086487939350528 |
|---|---|
| author | Guitian Qiu Lingan Kong Mengjiao Han Qian Zhang Majeed Ur Rehman Jianxian Yi Lede Xian Xiankai Lin Aumber Abbas Jiwei Chen Yingjie Luo Wenbo Li Zhongchao Wei Hongyun Meng Xiuliang Ma Qijie Liang |
| author_facet | Guitian Qiu Lingan Kong Mengjiao Han Qian Zhang Majeed Ur Rehman Jianxian Yi Lede Xian Xiankai Lin Aumber Abbas Jiwei Chen Yingjie Luo Wenbo Li Zhongchao Wei Hongyun Meng Xiuliang Ma Qijie Liang |
| author_sort | Guitian Qiu |
| collection | DOAJ |
| description | Abstract 2D semiconductors show promise as a competitive candidate for developing future integrated circuits due to their immunity to short‐channel effects and high carrier mobility at atomic layer thicknesses. The inherent defects and Fermi level pinning effect lead to n‐type transport characteristics in most 2D semiconductors, while unstable and unsustainable p‐type doping by various strategies hinders their application in many areas, such as complementary metal‐oxide‐semiconductor (CMOS) devices. In this study, an intralayer/interlayer codoping strategy is introduced that stabilizes p‐type doping in 2D semiconductors. By incorporating oppositely charged ions (F and Li) with the intralayer/interlayer of 2D semiconductors, remarkable p‐type doping in WSe2 and MoTe2 with air stability up to 9 months is achieved. Notably, the hole mobility presents a 100‐fold enhancement (0.7 to 92 cm2 V−1 s−1) with the codoping procedure. Structural and elemental characterizations, combined with theoretical calculations validate the codoping mechanism. Moreover, a CMOS inverter and more complex logic functions such as NOR and XNOR, as well as large‐area device arrays are demonstrated to showcase its applications and scalability. These findings suggest that stable and straightforward intralayer/interlayer codoping strategy with charge‐space synergy holds the key to unlocking the potential of 2D semiconductors in complex and scalable device applications. |
| format | Article |
| id | doaj-art-53c9b38640d545fa8d99cb8274b573b0 |
| institution | DOAJ |
| issn | 2198-3844 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-53c9b38640d545fa8d99cb8274b573b02025-08-20T02:43:28ZengWileyAdvanced Science2198-38442024-12-011148n/an/a10.1002/advs.202408634Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable ElectronicsGuitian Qiu0Lingan Kong1Mengjiao Han2Qian Zhang3Majeed Ur Rehman4Jianxian Yi5Lede Xian6Xiankai Lin7Aumber Abbas8Jiwei Chen9Yingjie Luo10Wenbo Li11Zhongchao Wei12Hongyun Meng13Xiuliang Ma14Qijie Liang15School of Information and Optoelectronic Science and Engineering South China Normal University Guangzhou 510006 ChinaSongshan Lake Materials Laboratory Dongguan 523808 ChinaSongshan Lake Materials Laboratory Dongguan 523808 ChinaSchool of Materials Shenzhen Campus of Sun Yat‐sen University Shenzhen 518107 ChinaSongshan Lake Materials Laboratory Dongguan 523808 ChinaSongshan Lake Materials Laboratory Dongguan 523808 ChinaSongshan Lake Materials Laboratory Dongguan 523808 ChinaSchool of Information and Optoelectronic Science and Engineering South China Normal University Guangzhou 510006 ChinaSongshan Lake Materials Laboratory Dongguan 523808 ChinaSongshan Lake Materials Laboratory Dongguan 523808 ChinaSongshan Lake Materials Laboratory Dongguan 523808 ChinaSongshan Lake Materials Laboratory Dongguan 523808 ChinaSchool of Information and Optoelectronic Science and Engineering South China Normal University Guangzhou 510006 ChinaSchool of Information and Optoelectronic Science and Engineering South China Normal University Guangzhou 510006 ChinaSongshan Lake Materials Laboratory Dongguan 523808 ChinaSongshan Lake Materials Laboratory Dongguan 523808 ChinaAbstract 2D semiconductors show promise as a competitive candidate for developing future integrated circuits due to their immunity to short‐channel effects and high carrier mobility at atomic layer thicknesses. The inherent defects and Fermi level pinning effect lead to n‐type transport characteristics in most 2D semiconductors, while unstable and unsustainable p‐type doping by various strategies hinders their application in many areas, such as complementary metal‐oxide‐semiconductor (CMOS) devices. In this study, an intralayer/interlayer codoping strategy is introduced that stabilizes p‐type doping in 2D semiconductors. By incorporating oppositely charged ions (F and Li) with the intralayer/interlayer of 2D semiconductors, remarkable p‐type doping in WSe2 and MoTe2 with air stability up to 9 months is achieved. Notably, the hole mobility presents a 100‐fold enhancement (0.7 to 92 cm2 V−1 s−1) with the codoping procedure. Structural and elemental characterizations, combined with theoretical calculations validate the codoping mechanism. Moreover, a CMOS inverter and more complex logic functions such as NOR and XNOR, as well as large‐area device arrays are demonstrated to showcase its applications and scalability. These findings suggest that stable and straightforward intralayer/interlayer codoping strategy with charge‐space synergy holds the key to unlocking the potential of 2D semiconductors in complex and scalable device applications.https://doi.org/10.1002/advs.202408634CMOS deviceshole dopingintralayer/interlayer codopinglarge‐area devicessuperior air stability |
| spellingShingle | Guitian Qiu Lingan Kong Mengjiao Han Qian Zhang Majeed Ur Rehman Jianxian Yi Lede Xian Xiankai Lin Aumber Abbas Jiwei Chen Yingjie Luo Wenbo Li Zhongchao Wei Hongyun Meng Xiuliang Ma Qijie Liang Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics Advanced Science CMOS devices hole doping intralayer/interlayer codoping large‐area devices superior air stability |
| title | Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics |
| title_full | Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics |
| title_fullStr | Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics |
| title_full_unstemmed | Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics |
| title_short | Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics |
| title_sort | intralayer interlayer codoping stabilizes polarity modulation in 2d semiconductors for scalable electronics |
| topic | CMOS devices hole doping intralayer/interlayer codoping large‐area devices superior air stability |
| url | https://doi.org/10.1002/advs.202408634 |
| work_keys_str_mv | AT guitianqiu intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT lingankong intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT mengjiaohan intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT qianzhang intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT majeedurrehman intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT jianxianyi intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT ledexian intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT xiankailin intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT aumberabbas intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT jiweichen intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT yingjieluo intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT wenboli intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT zhongchaowei intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT hongyunmeng intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT xiuliangma intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics AT qijieliang intralayerinterlayercodopingstabilizespolaritymodulationin2dsemiconductorsforscalableelectronics |